X-Ray Detector XRD-P
These independently developed X-ray detectors combine internally prepared high-quality radiation-detection crystals, precision electrodes and low-noise electronics. Semiconductor direct conversion turns X-ray ionization into electrical pulses, balancing efficiency, energy resolution and flexible integration in a compact volume. CdTe and perovskite versions support single-element detection, spectroscopy, linear/area imaging and special structures. Crystal size/thickness, electrodes, package window, front-end circuitry and interfaces are customizable. X-rays deposit energy through photoelectric absorption and other processes, generating electron–hole pairs. An applied field drifts carriers to opposing electrodes, forming energy-related charge pulses. Low-noise preamplification, shaping and digitization yield count rate, spectra or 2D images. Direct conversion eliminates scintillator/optical-conversion stages for compactness and preserved energy information.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Detection Crystal | CsPbBr₃ |
| Detection Method | Semiconductor Direct Conversion |
| Typical Energy Range | 10-120keV |
| Typical Effective Area | 5mm x 5mm / 10mm x 10mm |
| Crystal Thickness | 0.3-3.0mm |
| Sensitivity | 1000-10000μC Gy⁻¹ cm⁻² |
| Detection Limit | 10-100nGy s⁻¹ |
| Operating Temperature | 0-45°C |
| Output Interface | Analog Pulse / USB / Ethernet |
Applications
Key Features
Datasheet
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Supplier Information
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