Pixel Array Radiation Detector PRD-C

Pixel Array Radiation Detector PRD-C

Supplier
Thz-chip
Part Number
PRD-C
Category
Optical Detectors
Origin
China

The pixel-array radiation detector combines high-quality crystals, pixel electrodes, low-noise readout chips and fast acquisition for2D position-resolved X-ray, gamma-ray and alpha-particle detection. Single-chip, four-chip and multimodule tiling support customized pixel size, array scale, sensitive-layer thickness, readout and interfaces for high-resolution/spectral imaging and multiparticle-field analysis. Radiation creates local charge clouds; electrodes collect charge for pixel-level amplification, thresholding, counting or timing. FPGA/host processing corrects, clusters and reconstructs images, spectra or tracks, with bad-pixel/flat-field correction and multithreshold material identification.

Specification Snapshot
Detection Crystal
CdTe
Typical Array Size
25 x 25 / Tileable
Pixel Pitch
55 micrometer
Effective Area per Chip
Approximately 14.1mm x 14.1mm
Sensitive-Layer Thickness
0.5-2.0mm
Acquisition Mode
Frame Mode / Event Driven
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Overview

The pixel-array radiation detector combines high-quality crystals, pixel electrodes, low-noise readout chips and fast acquisition for2D position-resolved X-ray, gamma-ray and alpha-particle detection. Single-chip, four-chip and multimodule tiling support customized pixel size, array scale, sensitive-layer thickness, readout and interfaces for high-resolution/spectral imaging and multiparticle-field analysis. Radiation creates local charge clouds; electrodes collect charge for pixel-level amplification, thresholding, counting or timing. FPGA/host processing corrects, clusters and reconstructs images, spectra or tracks, with bad-pixel/flat-field correction and multithreshold material identification.

Specifications

ParameterValue
Detection CrystalCdTe
Typical Array Size25 x 25 / Tileable
Pixel Pitch55 micrometer
Effective Area per ChipApproximately 14.1mm x 14.1mm
Sensitive-Layer Thickness0.5-2.0mm
Typical Energy Range5-200keV
Acquisition ModeFrame Mode / Event Driven
Data InterfaceUSB 3.0 / GigE

Applications

Industrial CT;NDT;XRD;Composition Imaging;Medical Imaging Research;Electron Microscopy;Space Radiation;Particle Tracks;University Research

Key Features

Single-Photon Counting/Pixel-Level Energy for Low-Dose,High-Contrast Imaging;CdTe,Perovskite,InSiTeᴈ for Different Energies/Formats;Frame,Event,Arrival-Time,Time-over-Threshold Readout;Single/Seamless Multichip for Larger FOV;Image Correction,Event Clustering,Spectroscopy,Particle Classification;SDK/Raw Data;Options:Array,Pitch,Layer Thickness,Readout Chip,Tiling,Cooling,Collimator,Sync Trigger,Image Software,SDK

Datasheet

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Supplier Information

Th
Thz-chip
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Xi'an Taihe Dixin Technology Co., Ltd. is a technology enterprise established through the transformation of achievements from the State Key Laboratory of Solidification Processing and the Key Laboratory of Radiation Detection Materials and Devices of the Ministry of Industry and Information Technology at Northwestern Polytechnical University. The company focuses on the growth of electro-optic crystals for terahertz (THz) wave generation and detection, high-energy ray and particle detection semiconductor crystals, and the design, preparation, and production of related devices, mastering core preparation technologies for advanced semiconductor crystal materials. Currently, it can produce large-size high-quality ZnTe crystals, organic semiconductor crystals BNA, perovskite crystals CsPbBr₃, neutron detection crystals 6LiInSe2, etc., and provide devices, systems, and testing solutions, offering a full-chain service of 'special functional crystals + core devices + intelligent equipment + solutions', empowering the high-quality development of industries such as aviation, aerospace, and nuclear energy.

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Pixel Array Radiation Detector PRD-C
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