850nm 1*4 112G VCSEL Chip VMD85F0004-R1
Specification Snapshot
Wavelength (Emission Wavelength) λ [T=25°C and Iop=7.5mA unless otherwise noted; Ts=0°C-85°C]
min:844 nm; typical:855 nm; max:868 nm
Modulation Bandwidth (Small-Signal Bandwidth) BW(f3dB) [T=25°C and Iop=7.5mA unless otherwise noted; 7.5mA; Ts=0°C-85°C]
min:23 GHz
Threshold Current Ith [T=25°C and Iop=7.5mA unless otherwise noted; Ts=0°C-85°C]
max:1 mA
Operating Voltage V [T=25°C and Iop=7.5mA unless otherwise noted; Ts=25°C]
min:2.0 V; typical:2.4 V; max:2.5 V
Optical Output Power P [T=25°C and Iop=7.5mA unless otherwise noted; Ts=0°C-85°C]
typical:5.5 mW
Spectral Bandwidth (RMS) Δλ [T=25°C and Iop=7.5mA unless otherwise noted; RMS]
max:0.6 nm
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Specifications
| Parameter | Value |
|---|---|
| Wavelength (Emission Wavelength) λ [T=25°C and Iop=7.5mA unless otherwise noted; Ts=0°C-85°C] | min:844 nm; typical:855 nm; max:868 nm |
| Modulation Bandwidth (Small-Signal Bandwidth) BW(f3dB) [T=25°C and Iop=7.5mA unless otherwise noted; 7.5mA; Ts=0°C-85°C] | min:23 GHz |
| Slope Efficiency η [T=25°C and Iop=7.5mA unless otherwise noted; Ts=0°C-85°C] | min:0.45 W/A; max:1 W/A |
| Threshold Current Ith [T=25°C and Iop=7.5mA unless otherwise noted; Ts=0°C-85°C] | max:1 mA |
| Operating Voltage V [T=25°C and Iop=7.5mA unless otherwise noted; Ts=25°C] | min:2.0 V; typical:2.4 V; max:2.5 V |
| Differential Resistance Rd [T=25°C and Iop=7.5mA unless otherwise noted; Ts=25°C-85°C] | typical:85 Ω; max:100 Ω |
| Optical Output Power P [T=25°C and Iop=7.5mA unless otherwise noted; Ts=0°C-85°C] | typical:5.5 mW |
| Spectral Bandwidth (RMS) Δλ [T=25°C and Iop=7.5mA unless otherwise noted; RMS] | max:0.6 nm |
Applications
Parallel Fiber Communication Links; Optical Modules, Active Optical Cables; Data Centers; AI Computing Centers
Key Features
850nm Multimode;Reliable/Low Power;Low Parasitic Capacitance;Temperature Stability;Nonhermetic Environments;112Gbit/s PAM4 Single Channel
Datasheet
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Supplier Information
Huaxin Semiconductor Technology Co., Ltd. is located in Jiangyan High-tech Zone, Taizhou City, covering an area of over 90 acres with a building area of 50,000 square meters. The company possesses internationally advanced epitaxial metal-organic chemical vapor deposition (MOCVD) equipment, chip processing equipment, and packaging equipment, primarily engaged in the research, development, and production of cutting-edge compound semiconductor optoelectronic chips and their application products. Its main products include high-brightness LEDs, blue-green semiconductor laser diodes, vertical-cavity surface-emitting (VCSEL) photonic chips, DFB photonic chips, EML photonic chips, and high-brightness semiconductor laser chips, etc. The products are mainly applied in laser display, laser lighting, laser television, fiber optic communication, data centers, cloud computing, supercomputing, and other fields.
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