850nm 1*4 112G VCSEL Chip VMD85F0004-R1

850nm 1*4 112G VCSEL Chip VMD85F0004-R1

Supplier
Sinosemic
Part Number
VMD85F0004-R1
Category
Laser Diodes
Origin
China
Specification Snapshot
Wavelength (Emission Wavelength) λ [T=25°C and Iop=7.5mA unless otherwise noted; Ts=0°C-85°C]
min:844 nm; typical:855 nm; max:868 nm
Modulation Bandwidth (Small-Signal Bandwidth) BW(f3dB) [T=25°C and Iop=7.5mA unless otherwise noted; 7.5mA; Ts=0°C-85°C]
min:23 GHz
Threshold Current Ith [T=25°C and Iop=7.5mA unless otherwise noted; Ts=0°C-85°C]
max:1 mA
Operating Voltage V [T=25°C and Iop=7.5mA unless otherwise noted; Ts=25°C]
min:2.0 V; typical:2.4 V; max:2.5 V
Optical Output Power P [T=25°C and Iop=7.5mA unless otherwise noted; Ts=0°C-85°C]
typical:5.5 mW
Spectral Bandwidth (RMS) Δλ [T=25°C and Iop=7.5mA unless otherwise noted; RMS]
max:0.6 nm
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Specifications

ParameterValue
Wavelength (Emission Wavelength) λ [T=25°C and Iop=7.5mA unless otherwise noted; Ts=0°C-85°C]min:844 nm; typical:855 nm; max:868 nm
Modulation Bandwidth (Small-Signal Bandwidth) BW(f3dB) [T=25°C and Iop=7.5mA unless otherwise noted; 7.5mA; Ts=0°C-85°C]min:23 GHz
Slope Efficiency η [T=25°C and Iop=7.5mA unless otherwise noted; Ts=0°C-85°C]min:0.45 W/A; max:1 W/A
Threshold Current Ith [T=25°C and Iop=7.5mA unless otherwise noted; Ts=0°C-85°C]max:1 mA
Operating Voltage V [T=25°C and Iop=7.5mA unless otherwise noted; Ts=25°C]min:2.0 V; typical:2.4 V; max:2.5 V
Differential Resistance Rd [T=25°C and Iop=7.5mA unless otherwise noted; Ts=25°C-85°C]typical:85 Ω; max:100 Ω
Optical Output Power P [T=25°C and Iop=7.5mA unless otherwise noted; Ts=0°C-85°C]typical:5.5 mW
Spectral Bandwidth (RMS) Δλ [T=25°C and Iop=7.5mA unless otherwise noted; RMS]max:0.6 nm

Applications

Parallel Fiber Communication Links; Optical Modules, Active Optical Cables; Data Centers; AI Computing Centers

Key Features

850nm Multimode;Reliable/Low Power;Low Parasitic Capacitance;Temperature Stability;Nonhermetic Environments;112Gbit/s PAM4 Single Channel

Datasheet

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Supplier Information

Si
Sinosemic
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Huaxin Semiconductor Technology Co., Ltd. is located in Jiangyan High-tech Zone, Taizhou City, covering an area of over 90 acres with a building area of 50,000 square meters. The company possesses internationally advanced epitaxial metal-organic chemical vapor deposition (MOCVD) equipment, chip processing equipment, and packaging equipment, primarily engaged in the research, development, and production of cutting-edge compound semiconductor optoelectronic chips and their application products. Its main products include high-brightness LEDs, blue-green semiconductor laser diodes, vertical-cavity surface-emitting (VCSEL) photonic chips, DFB photonic chips, EML photonic chips, and high-brightness semiconductor laser chips, etc. The products are mainly applied in laser display, laser lighting, laser television, fiber optic communication, data centers, cloud computing, supercomputing, and other fields.

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850nm 1*4 112G VCSEL Chip VMD85F0004-R1
Sinosemic · Laser Diodes
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