Photodiode device materials (Photo-Diode)—Gallium arsenide and indium phosphide epitaxial wafers

Zhongke Xindian Semiconductor Technology (Beijing) Co., Ltd. was established in October 2014. It is a high-tech enterprise specializing in the R&D and production of InP-based and GaAs-based optoelectronic and microelectronic MBE epitaxial materials. The company has passed ISO9001:2015, ISO14001, Beijing High-tech Enterprise, Zhongguancun High-tech Enterprise and other related certifications. The company currently has multiple production lines of Veeco GEN2000 mass-production MBE epitaxial wafer processes from the United States, as well as a full set of internationally advanced analytical and testing equipment. It has built more than 2,000 square meters of supporting factory buildings, including Class 10, Class 100 and Class 1000 cleanrooms. In 2022, large-scale production was achieved, with a capacity of 80,000 wafers per year (converted to 2 inches). InP-based and GaAs epitaxial materials are core components of chips and devices such as optical communications, photodetectors, microwave RF, and laser sensors. The company's products cover important applications in the optoelectronic field such as APD, PD, VCSEL, QCL, and in the microelectronic field such as PHEMT, HEMT, HBT, SBD, RTD. Some products (such as 10G, 25G, 50G APD, 800G, 1.6T PD, PHEMT, etc.) have reached the performance level of similar international products and achieved multi-batch mass production.