405nm350mw Laser Diode GH04W10A2GC
The GH04W10A2GC incorporates an InGaN multiple quantum well blue violet laser diode.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Optical power output CW Po [Absolute Maximum Ratings; Tc=25℃; Case temperature] | 350 mW |
| Optical power output Pulse Pp [Absolute Maximum Ratings; Tc=25℃; Case temperature; Pulse Width0.2μs; Duty50%] | 1,100 |
| Reverse voltage Laser diode Vrl [Absolute Maximum Ratings; Tc=25℃; Case temperature] | 2 V |
| Operating temperature (Case temperature) CW Topc(c) [Absolute Maximum Ratings; Tc=25℃] | 0 ～ +50 ℃ |
| Operating temperature (Case temperature) Pulse Topp(c) [Absolute Maximum Ratings; Tc=25℃; Pulse Width0.2μs; Duty50%] | 0 ～ +50 ℃ |
| Storage temperature Tstg [Absolute Maximum Ratings; Tc=25℃; Case temperature] | -40 ～ +85 ℃ |
| Soldering temperature Tsld [Absolute Maximum Ratings; Tc=25℃; Case temperature; soldering iron tip temperature; Soldering position1.6mm apart from bottom edge of case; Immersion time≤3s] | 350 ℃ |
| Threshold current Ith [Tc=25℃; Initial value; Continuous Wave Operation] | typical:140 mA; max:200 mA |
| Operating current Iop [Tc=25℃; Initial value; Continuous Wave Operation; Po=300mW] | min:250 mA; typical:325 mA; max:400 mA |
| Operating voltage Vop [Tc=25℃; Initial value; Continuous Wave Operation; Po=300mW] | typical:4.5 V; max:5.5 V |
| Wavelength λp [Tc=25℃; Initial value; Continuous Wave Operation; Po=300mW] | min:400 nm; typical:406 nm; max:414 nm |
| 1/e2 Intensity Angle(Parallel) θ∥(1/e2) [Tc=25℃; Initial value; Continuous Wave Operation; Po=300mW; Full angle of13.5%(≒1/e²) peak intensity; Parallel to junction plane(X-Z plane)] | min:8 °; typical:14 °; max:20 ° |
| 1/e2 Intensity Angle(Perpendicular) θ⊥(1/e2) [Tc=25℃; Initial value; Continuous Wave Operation; Po=300mW; Full angle of13.5%(≒1/e²) peak intensity; Perpendicular to junction plane(Y-Z plane)] | min:36 °; typical:41 °; max:46 ° |
| Misalignment angle (Parallel) Δθ∥(1/e2) [Tc=25℃; Initial value; Continuous Wave Operation; Po=300mW; Misalignment angle of13.5%(≒1/e²) peak intensity; Parallel to junction plane(X-Z plane)] | min:-3 °; max:3 ° |
| Misalignment angle (Perpendicular) Δθ⊥(1/e2) [Tc=25℃; Initial value; Continuous Wave Operation; Po=300mW; Misalignment angle of13.5%(≒1/e²) peak intensity; Perpendicular to junction plane(Y-Z plane)] | min:-4 °; max:4 ° |
| Slope efficiency ηd [Tc=25℃; Initial value; Continuous Wave Operation; 120mW I(300mW)-I(180mW)] | min:1.4 mW/mA; typical:1.8 mW/mA; max:2.2 mW/mA |
| Polarization Angle [Tc=25℃; Initial value; Continuous Wave Operation; Po=50mW NA=0.13; JIS-C-5943] | min:-5 °; max:5 ° |
| Polarization Ratio Pl [Tc=25℃; Initial value; Continuous Wave Operation; Po=50mW NA=0.13; JIS-C-5943] | min:100 |
| Pulse operating current PIop [Tc=25℃; Initial value; Pulse Operation; Pulse Width0.2μs; Duty50%; Pp=1,000mW] | max:1,000 |
| Difference rate of ηp Δηp [Tc=25℃; Initial value; Pulse Operation; Pulse Width0.2μs; Duty50%; Pp=50～1,000mW; Δηp=(ηpMax−ηpMin)/ηp×100%; ηp=950mW/[Iop(1000mW)−Iop(50mW)]; ηpMax/Min measured betweenPp50–1000mW at Iop increments5mA] | max:100 % |
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