UM-I-10.6
2–12µm Detective range ，DC–100mhz Bandwidth HgCdTe Universal Infrared Detection module ， With optical impregnation long wave Photovoltaic Multi-cut Infrared Detector UM-I-10.6 is Generic “ One ” Infrared Detection module 。 Based on thermal cooling 、 Optical impregnation Photovoltaic Multi-container detector ， It's a cross-border resistance. 、 Straight-stream coupling Preamplifier 、 Fans and TEC Temperature Controller 。3° Wedge Zinc Selenide Anti-reflective coating windows prevent unnecessary interference 。UM-I-10.6 Detection module is A very user-friendly and highly integrated device ， So it's applicable to all categories LWIR Apply 。 Specification parameters Spectro-response Features and applications
Save to Favorites
Overview
Specifications
| Parameter | Value |
|---|---|
| Minimum Cutoff Wavelength λcut-on (10%) [Parameters （Ta = 20°C, Default Settings ）] | ≤2.0 µm |
| Peak Wavelength λpeak [Parameters （Ta = 20°C, Default Settings ）] | 8.5±1.5 µm |
| Optimization Wavelength λopt [Parameters （Ta = 20°C, Default Settings ）] | 10.6 µm |
| Highest Cutoff Wavelength λcut-off (10%) [Parameters （Ta = 20°C, Default Settings ）] | ≥12.0 µm |
| Detection rate D*(λpeak), cm·Hz^(1/2) [Parameters （Ta = 20°C, Default Settings ）] | ≥5.5×10⁸ |
| Detection rate D*(λopt), cm·Hz^(1/2) [Parameters （Ta = 20°C, Default Settings ）] | ≥3.7×10⁸ |
| Output Noise Density vₙ ( Average is 1 MHz to fhi), nV/Hz^(1/2 ) [Parameters （Ta = 20°C, Default Settings ）] | ≤330 |
| Voltage Responsivity Rv (λpeak,) [Parameters （Ta = 20°C, Default Settings ）] | ≥9.7×10² |
| Voltage Responsivity Rv (λopt) [Parameters （Ta = 20°C, Default Settings ）] | ≥6.5×10² |
| Low Cutoff Frequency flo [Parameters （Ta = 20°C, Default Settings ）] | DC |
| High Cutoff Frequency fhi [Parameters （Ta = 20°C, Default Settings ）] | ≥100M |
| High Cutoff Frequency fhi [Parameters （Ta = 20°C, Default Settings ）] | 150k |
| Output Impedance Rout [Parameters （Ta = 20°C, Default Settings ）] | 50 Ω |
| Output voltage Vout [Parameters （Ta = 20°C, Default Settings ）] | ±1 (RL = 50 Ω*)) |
| Output voltage Offset Voff [Parameters （Ta = 20°C, Default Settings ）] | max ±20 |
| Power Supply Electricity Vsup [Parameters （Ta = 20°C, Default Settings ）] | 5 V |
| Voltage Responsivity Rv(λpeak) [Parameters （Ta = 20°C, Default Settings ）] | ≥2.2×10² |
| Voltage Responsivity Rv(λopt) [Parameters （Ta = 20°C, Default Settings ）] | ≥1.5×10² |
| Photo-sensitivity component Material [Parameters （Ta = 20°C, Default Settings ）] | HgCdTe |
| Light-sensitized area A_(O), mm×mm [Parameters （Ta = 20°C, Default Settings ）] | 1×1 |
| Window [Parameters （Ta = 20°C, Default Settings ）] | wZnSeAR |
| Receive angle Φ [Parameters （Ta = 20°C, Default Settings ）] | ~36° |
| Operating ring temperature requirements Ta [Parameters （Ta = 20°C, Default Settings ）] | 10 to 30 °C |
| Signal Output Interface [Parameters （Ta = 20°C, Default Settings ）] | SMA |
| DC monitor Interface [Parameters （Ta = 20°C, Default Settings ）] | SMA |
| Electricity Interface [Parameters （Ta = 20°C, Default Settings ）] | DC 2.5/5.5 |
| Installation hole [Parameters （Ta = 20°C, Default Settings ）] | M4 |
| Fan [Parameters （Ta = 20°C, Default Settings ）] | Yes. |
Applications
Key Features
Datasheet
Please provide your email to download the datasheet.
Invalid email format. Please try again.
Supplier Information
Related Products
-
1700nm PD
Optical Detectors
Mindsemi
-
4×100G PAM4 PD Array
Optical Detectors
Mindsemi
Product Rate: 100G
-
4×10G PD Array
Optical Detectors
Mindsemi
Product Rate: 10G
-
Silicon photomultiplier
Optical Detectors
Adapsphotonics
Lingming Photonics' latest P5P silicon photomultipliers combine photon trapping, microlenses, and back-side illumination (BSI). At 905nm they offer PDE up to 25%, with recovery time, dark count rate, crosstalk, and other parameters leading competing products. Optimized for lidar, the P5P maintains high PDE at lower bias and operates at temperatures up to 105°C. For automotive reliability, the P5P SiPM was expected to complete AEC-Q102 by the end of 2022. Lingming offers single-line to 16-line SiPMs and customer-specific development.
-
ADS6311 fully solid-state large-array SPAD dToF chip
Optical Detectors
Adapsphotonics
Using advanced 3D-Stacking and loop-based TDC design, Lingming Photonics stacks sensitive SPAD devices above high-speed logic, combining sensing, computation, and storage. Multiple generations have achieved grayscale output up to 768x576 and TOF depth output at 256x192, enabling high-resolution depth-camera chips.
Related Articles
Founded in 2003, BWT Beijing Optoelectronics adheres to the mission "Let Dreams Fly With Light" and vision of becoming a Global Leader in Laser Solutions, guided by the core value "Innovate to Achieve Extraordinary".
As premium broadband light sources situated between traditional LEDs and laser diodes, MicroLight superluminescent‑diode (SLD) products combine broad spectral bandwidth, sufficient optical output power and low‑coherence performance.
Founded in November 2017, TIANJIN H‑CHIP TECHNOLOGY GROUP CORPORATION is a professional manufacturing‑service provider dedicated to micro‑nano optoelectronic chips. It holds multiple prestigious qualifications, including National High‑Tech Enterprise, one of Tianjin’s first Gazelle‑certified Enterprises, Specialized‑Refined‑Differentiated‑Innovative SME, and Leading Enterprise for Strategic Emerging Industries.
Looking for a market-verified 808nm pump laser diode? This guide introduces HAUCORE DM-8E5A-8OD (HGLD-808-COS-D-5W), its core advantages, key specs and mainstream industrial, medical & research applications.
Loading...
Name
Phone
Organization
Use Case
Database Platform