PVI-4-1×1-TO39-NW-36
2.4–4.5µm Detective range ，HgCdTe Non-refrigerant （ Room temperature ）， Optical impregnation Photovoltaic Detector PVI-4-1×1-TO39-NW-36 is One based on complexity. HgCdTe Non-refrigeration of heterogeneity structures Infrared Photons. ， It's a good stability. 。 The Material Optimized ， is. 4µm Optimistic performances at times ， And high hemispherics. GaAs Micro Lens To improve detection. ， Reverse bias can increase response speed and Dynamic Scope 。 Specification parameters Spectro-response Features and applications
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Overview
Specifications
| Parameter | Value |
|---|---|
| Photo-sensitivity component Material [Parameters （Ta = 20°C, Vb = 0 mV）] | HgCdTe |
| Minimum Cutoff Wavelength λcut-on (10%) [Parameters （Ta = 20°C, Vb = 0 mV）] | 2.4±0.5 µm |
| Peak Wavelength λpeak [Parameters （Ta = 20°C, Vb = 0 mV）] | 3.4±0.5 µm |
| Optimization Wavelength λopt [Parameters （Ta = 20°C, Vb = 0 mV）] | 4 µm |
| Highest Cutoff Wavelength λcut-off (10%) [Parameters （Ta = 20°C, Vb = 0 mV）] | 4.5±0.3 µm |
| Detection rate D*(λpeak), cm·Hz^(1/2) [Parameters （Ta = 20°C, Vb = 0 mV）] | ≥4.0×10¹⁰ |
| Detection rate D*(λopt), cm·Hz^(1/2) [Parameters （Ta = 20°C, Vb = 0 mV）] | ≥3.0×10¹⁰ |
| Electricity Responsiveness Ri(λpeak) [Parameters （Ta = 20°C, Vb = 0 mV）] | ≥2.0 A/W |
| Electricity Responsiveness Ri(λopt) [Parameters （Ta = 20°C, Vb = 0 mV）] | ≥1.0 A/W |
| Time constant τ [Parameters （Ta = 20°C, Vb = 0 mV）] | ≤150 ns |
| - Stop it! R [Parameters （Ta = 20°C, Vb = 0 mV）] | ≥600 Ω |
| Light-sensitized area Ao, mm×mm [Parameters （Ta = 20°C, Vb = 0 mV）] | 1×1 |
| Encapsulated [Parameters （Ta = 20°C, Vb = 0 mV）] | TO39 |
| Receive angle Φ [Parameters （Ta = 20°C, Vb = 0 mV）] | ~36° |
Applications
Key Features
Datasheet
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