PVI-2TE-6-1×1-TO8-wZnSeAR-36
3.0–6.7µm，HgCdTe Second-stage thermal electricity cooling ， Optical impregnation Photovoltaic Detector PVI-2TE-6-1×1-TO8-wZnSeAR-36 is One based on complexity. HgCdTe Second-stage heat-electric cooling of heterogeneity structures Infrared Photons. ， It's a good stability. 。 The Material Optimized ， is. 6µm Optimistic performances at times ， High hemispheric. GaAs Micro Lens To improve detection. ， Reverse bias can increase response speed and Dynamic Scope 。3° Wedge Zinc Selenide （wZnSeAR） Anti-reflective coating windows to prevent unnecessary interference effects 。 Specification parameters Spectro-response Features and applications •UM-I-6 Detection module
Save to Favorites
Overview
Specifications
| Parameter | Value |
|---|---|
| Photo-sensitivity component Material [Parameters （Ta = 20°C, Vb = 0 mV）] | HgCdTe |
| Minimum Cutoff Wavelength λcut-on (10%) [Parameters （Ta = 20°C, Vb = 0 mV）] | 3.0±1.0 µm |
| Peak Wavelength λpeak [Parameters （Ta = 20°C, Vb = 0 mV）] | 5.2±0.5 µm |
| Optimization Wavelength λopt [Parameters （Ta = 20°C, Vb = 0 mV）] | 6 µm |
| Highest Cutoff Wavelength λcut-off (10%) [Parameters （Ta = 20°C, Vb = 0 mV）] | 6.7±0.3 µm |
| Detection rate D*(λpeak), cm·Hz^(1/2) [Parameters （Ta = 20°C, Vb = 0 mV）] | ≥7.0×10¹⁰ |
| Detection rate D*(λopt), cm·Hz^(1/2) [Parameters （Ta = 20°C, Vb = 0 mV）] | ≥4.0×10¹⁰ |
| Electricity Responsiveness Ri(λpeak) [Parameters （Ta = 20°C, Vb = 0 mV）] | ≥2.7 A/W |
| Electricity Responsiveness Ri(λopt) [Parameters （Ta = 20°C, Vb = 0 mV）] | ≥1.5 A/W |
| Time constant τ [Parameters （Ta = 20°C, Vb = 0 mV）] | ≤50 ns |
| - Stop it! R [Parameters （Ta = 20°C, Vb = 0 mV）] | ≥200 Ω |
| Chip Operating Temperature Tdet [Parameters （Ta = 20°C, Vb = 0 mV）] | ~230 K |
| Light-sensitized area Ao, mm×mm [Parameters （Ta = 20°C, Vb = 0 mV）] | 1×1 |
| Encapsulated [Parameters （Ta = 20°C, Vb = 0 mV）] | TO8 |
| Receive angle Φ [Parameters （Ta = 20°C, Vb = 0 mV）] | ~36° |
| Window [Parameters （Ta = 20°C, Vb = 0 mV）] | wZnSeAR |
Applications
Key Features
Datasheet
Please provide your email to download the datasheet.
Invalid email format. Please try again.
Supplier Information
Related Products
-
1700nm PD
Optical Detectors
Mindsemi
-
4×100G PAM4 PD Array
Optical Detectors
Mindsemi
Product Rate: 100G
-
4×10G PD Array
Optical Detectors
Mindsemi
Product Rate: 10G
-
Silicon photomultiplier
Optical Detectors
Adapsphotonics
Lingming Photonics' latest P5P silicon photomultipliers combine photon trapping, microlenses, and back-side illumination (BSI). At 905nm they offer PDE up to 25%, with recovery time, dark count rate, crosstalk, and other parameters leading competing products. Optimized for lidar, the P5P maintains high PDE at lower bias and operates at temperatures up to 105°C. For automotive reliability, the P5P SiPM was expected to complete AEC-Q102 by the end of 2022. Lingming offers single-line to 16-line SiPMs and customer-specific development.
-
ADS6311 fully solid-state large-array SPAD dToF chip
Optical Detectors
Adapsphotonics
Using advanced 3D-Stacking and loop-based TDC design, Lingming Photonics stacks sensitive SPAD devices above high-speed logic, combining sensing, computation, and storage. Multiple generations have achieved grayscale output up to 768x576 and TOF depth output at 256x192, enabling high-resolution depth-camera chips.
Related Articles
Founded in 2003, BWT Beijing Optoelectronics adheres to the mission "Let Dreams Fly With Light" and vision of becoming a Global Leader in Laser Solutions, guided by the core value "Innovate to Achieve Extraordinary".
As premium broadband light sources situated between traditional LEDs and laser diodes, MicroLight superluminescent‑diode (SLD) products combine broad spectral bandwidth, sufficient optical output power and low‑coherence performance.
Founded in November 2017, TIANJIN H‑CHIP TECHNOLOGY GROUP CORPORATION is a professional manufacturing‑service provider dedicated to micro‑nano optoelectronic chips. It holds multiple prestigious qualifications, including National High‑Tech Enterprise, one of Tianjin’s first Gazelle‑certified Enterprises, Specialized‑Refined‑Differentiated‑Innovative SME, and Leading Enterprise for Strategic Emerging Industries.
Looking for a market-verified 808nm pump laser diode? This guide introduces HAUCORE DM-8E5A-8OD (HGLD-808-COS-D-5W), its core advantages, key specs and mainstream industrial, medical & research applications.
Loading...
Name
Phone
Organization
Use Case
Database Platform