PCI-3TE-12-1×1-TO8-wZnSeAR-36
1–14µm，HgCdTe Three Stage Thermoelectric Cooling ， Optical impregnation of optical optic detectors PCI-3TE-12-1×1-TO8-wZnSeAR-36 is One based on complexity. HgCdTe Three Stage Thermoelectrically Cooled Infrared Photodetector with a Heterostructure ， It's a good stability. 。 The Material Optimized ， is. 12µm Optimistic performances at times ， High hemispheric. GaAs Micro Lens To improve detection. ， The PV detector should work under the best-replaced voltage and current patterns. 。 The performance at low frequency is due to 1/f Noise reduced. ，3° Wedge Zinc Selenide （wZnSeAR） Anti-reflective coating windows prevent unnecessary interference effects 。 Specification parameters Spectro-response Features and applications
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Overview
Specifications
| Parameter | Value |
|---|---|
| Photo-sensitivity component Material [Parameters （Ta = 20°C）] | HgCdTe |
| Minimum Cutoff Wavelength λcut-on (10%) [Parameters （Ta = 20°C）] | ≤2.0 µm |
| Peak Wavelength λpeak [Parameters （Ta = 20°C）] | 10.0±0.2 µm |
| Optimization Wavelength λopt [Parameters （Ta = 20°C）] | 12 µm |
| Highest Cutoff Wavelength λcut-off (10%) [Parameters （Ta = 20°C）] | 14.0±0.2 µm |
| Detection rate D*(λpeak), cm·Hz^(1/2) [Parameters （Ta = 20°C）] | ≥1.6×10⁹ |
| Detection rate D*(λopt), cm·Hz^(1/2) [Parameters （Ta = 20°C）] | ≥9.0×10⁸ |
| Electricity Responsiveness Ri(λpeak) [Parameters （Ta = 20°C）] | ≥0.11 A/W |
| Electricity Responsiveness Ri(λopt) [Parameters （Ta = 20°C）] | ≥0.07 A/W |
| Time constant τ [Parameters （Ta = 20°C）] | ≤5 ns |
| - Stop it! R [Parameters （Ta = 20°C）] | ≤300 Ω |
| Opposed voltage Vb [Parameters （Ta = 20°C）] | ≤1.8 V |
| 1/f Noise frequency fc [Parameters （Ta = 20°C）] | ≤20 kHz |
| Chip Operating Temperature Tdet [Parameters （Ta = 20°C）] | ~210 K |
| Light-sensitized area Ao, mm×mm [Parameters （Ta = 20°C）] | 1×1 |
| Encapsulated [Parameters （Ta = 20°C）] | TO8 |
| Receive angle Φ [Parameters （Ta = 20°C）] | ~36° |
| Window [Parameters （Ta = 20°C）] | wZnSeAR |
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Key Features
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