1532.4nm TOF LiDAR source

1532.4nm TOF LiDAR source

Supplier
Ori-chip
Category
LiDAR
Origin
China
Specification Snapshot
Threshold Current Iₜₕ [40°C, CW]
min:4 mA; max:20 mA
Center Wavelengths [fe =Iₜₕ+100mA;pulse @ 25℃]
min:1532 nm; max:1532.8 nm
Side Mode Suppression ratio SMSR [40°C, Iₜₕ+60 mA]
min:45 dB; typical:50 dB
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Specifications

ParameterValue
Threshold Current Iₜₕ [40°C, CW]min:4 mA; max:20 mA
Optical Output Power [40°C, Iₜₕ+60 mA]min:6 mW
Laser Forward Voltage V_(f) [40°C, Iₜₕ+60 mA]typical:1.6 V; max:2.0 V
Slope Efficiency SE [40°C, Iₜₕ+60 mA]min:0.15 mW/mA; typical:0.2 mW/mA
Resistance [25°C, CW, Iₜₕ+20 mA]min:9.5 Ω; max:10.5 Ω
Center Wavelengths [fe =Iₜₕ+100mA;pulse @ 25℃]min:1532 nm; max:1532.8 nm
Side Mode Suppression ratio SMSR [40°C, Iₜₕ+60 mA]min:45 dB; typical:50 dB
Relative Intensity Noise RIN [25°C]max:-130 dB/Hz
Kink [Range[10,70]mA, CW]max:20 %
Temperature Dependence of Wavelength [CW]typical:0.096 nm/deg
20dB Width [CW, Iₜₕ+20 mA]typical:0.3 nm; max:0.5 nm

Applications

Radar light source Optical system

Key Features

● 1532 nm DFB Laser ● Temperature stabilized with TEC controlled ● High Temperature Operation: -40 to 115 °C

Datasheet

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Supplier Information

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Ori-chip
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Founded in 2018, Ori-Chip Optoelectronics Technology Co. Ltd., is dedicated to make the state-of-the-art photonic integrated circuits, including both InP and thin-film lithium niobate platforms. Our main products include: full C-band Widely-tunable lasers,Thin-film lithium niobate MZM modulators,and DFB laser diodes for both fiber optic communication and sensing. Using the cutting-edge InP and thin-film lithium niobate technology, our products deliver the best performance at competitive price. We hold multiple IPs, including patents from both China and the United States. All of our products are made in-house by ORI-CHIP wafer fabs.

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1532.4nm TOF LiDAR source
Ori-chip · LiDAR
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