RIO ORION™ Series 1550nm Low Phase Noise Narrow Linewidth Laser Source

RIO ORION™ Series 1550nm Low Phase Noise Narrow Linewidth Laser Source

Supplier
Afrlaser
Category
Laser Modules & Systems
Origin
China

The ORION™ laser sources are compact benchtop lasers based on the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant advantages. The ORION™ laser source’s features provide end users with a stable, self-contained, easy-to-use alternative to complicated and expensive fiber laser sources. The ORION™ laser source uses reliable, Telcordia qualified and industry proven components, and employs low noise, digital laser bias current and temperature control circuitry to set and monitor laser performance. External monitoring and control can be employed via a standard USB interface, using RIO-supplied software. The ORION™ laser source is an ideal source for R&D, commercial, and advanced fiber optic sensing applications, such as interferometric and Brillouin DTSS systems for oil & gas, security and smart infrastructure monitoring, coherent Doppler LIDAR for wind measurements, coherent and heterodyne metrology, photonic velocimetry and vibrometry, and coherent communications.

Specification Snapshot
Storage Temperature [Absolute Maximum Ratings]
-40 to +85 ℃
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Overview

The ORION™ laser sources are compact benchtop lasers based on the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant advantages. The ORION™ laser source’s features provide end users with a stable, self-contained, easy-to-use alternative to complicated and expensive fiber laser sources. The ORION™ laser source uses reliable, Telcordia qualified and industry proven components, and employs low noise, digital laser bias current and temperature control circuitry to set and monitor laser performance. External monitoring and control can be employed via a standard USB interface, using RIO-supplied software. The ORION™ laser source is an ideal source for R&D, commercial, and advanced fiber optic sensing applications, such as interferometric and Brillouin DTSS systems for oil & gas, security and smart infrastructure monitoring, coherent Doppler LIDAR for wind measurements, coherent and heterodyne metrology, photonic velocimetry and vibrometry, and coherent communications.

Specifications

ParameterValue
Storage Temperature [Absolute Maximum Ratings]-40 to +85 ℃
Max. Laser Source Supply Voltage [Absolute Maximum Ratings]5.5 V
Max. ESD-susceptibility [Absolute Maximum Ratings]500 V
Typ. Power Stability over Case Temperature Range dP_out [At recommended TEC set temperature Tₛ and bias current I_b;0 to +70 ℃]±10 %
Typ. Wavelength Stability over Case Temperature Range dλ [At recommended TEC set temperature Tₛ and bias current I_b;0 to +70 ℃]±10 pm
Typ. Power Stability over Case Temperature Range dP_out [At recommended TEC set temperature Tₛ and bias current I_b;+10 to +55 ℃]±5 %
Typ. Wavelength Stability over Case Temperature Range dλ [At recommended TEC set temperature Tₛ and bias current I_b;+10 to +55 ℃]±5 pm
Max. Power Stability over Case Temperature Range dP_out [At recommended TEC set temperature Tₛ and bias current I_b; ≤ ±1 ℃]±0.3 %
Max. Wavelength Stability over Case Temperature Range dλ [At recommended TEC set temperature Tₛ and bias current I_b; ≤ ±1 ℃]±0.5 pm
Center Wavelength (ITU Grid) λ [At recommended TEC set temperature Tₛ and bias current I_b;±40 pm standard]1530–1565 nm
Min. Wavelength Tuning Range Δλ_T [Recommended TEC setpoint Tₛ and bias current I_b; phase-continuous TEC temperature tuning; some performance parameters change over range; asymmetric minimum +10 to -20 pm; custom extension up to ±45 pm]30 pm
Typ. Frequency Stability ν_t1 [At recommended TEC set temperature Tₛ and bias current I_b;Free running over 1 hour(s);After 1 hour stabilization;heterodyning two lasers at constant case temperature]±2 MHz
Max. Frequency Stability ν_t1 [At recommended TEC set temperature Tₛ and bias current I_b;Free running over 1 hour(s);After 1 hour stabilization;heterodyning two lasers at constant case temperature]±4 MHz
Typ. Frequency Stability ν_t8 [At recommended TEC set temperature Tₛ and bias current I_b;Free running over 8 hour(s);After 1 hour stabilization;heterodyning two lasers at constant case temperature]±3 MHz
Max. Frequency Stability ν_t8 [At recommended TEC set temperature Tₛ and bias current I_b;Free running over 8 hour(s);After 1 hour stabilization;heterodyning two lasers at constant case temperature]±6 MHz
Max. Relative Intensity Noise RIN [At recommended TEC set temperature Tₛ and bias current I_b;≥1 kHz]-140 dB/Hz
Relative Intensity Noise RIN [At recommended TEC set temperature Tₛ and bias current I_b;≥500 kHz]Shot noise limited
Min. Side Mode Suppression Ratio SMSR [At recommended TEC set temperature Tₛ and bias current I_b;CW at specified P_out]40 dB
Min. Optical S/N Ratio [At recommended TEC set temperature Tₛ and bias current I_b;From spontaneous noise levels at ±1 nm from λ]60 dB
Min. Polarization Extinction Ratio PER [At recommended TEC set temperature Tₛ and bias current I_b;PM-fiber PANDA option;polarization and connector key aligned to slow axis]20 dB
Min. Optical Isolation ISO [At recommended TEC set temperature Tₛ and bias current I_b]40 dB
Voltage Supply V_cc [At recommended TEC set temperature Tₛ and bias current I_b]4.75–5.25 V
Typ. Voltage Supply V_cc [At recommended TEC set temperature Tₛ and bias current I_b]5 V
Frequency Modulation Bandwidth f_mL [LF;RIO31XX- & RIO33XX-;Sinusoidal modulation;via pin4 of ORION D-9]DC–100
Min. Frequency Tuning Efficiency η_mL [LF; RIO31XX- & RIO33XX-; sinusoidal modulation at 10 kHz; regular specification; grade4/5 alternative minimum20; efficiency varies over bandwidth]25 MHz/V
Typ. Frequency Tuning Efficiency η_mL [LF;RIO31XX- & RIO33XX-;Sinusoidal modulation at 10 kHz;efficiency varies over bandwidth]50 MHz/V
Min. Frequency Tuning Efficiency η_mL [LF;RIO31XX- & RIO33XX-;Grade4 or Grade5 phase noise spec;Sinusoidal modulation at 10 kHz;efficiency varies over bandwidth]20 MHz/V
Tuning Voltage Magnitude V_tuneL [LF;RIO31XX- & RIO33XX-;Through BNC input]-4 to +4 V
Typ. Output Power Modulation Index M_L [LF;RIO31XX- & RIO33XX-;Sinusoidal modulation at 10 kHz;wavelength tuning100 MHz p-p;FM also modulates output power]5 %
Max. Output Power Modulation Index M_L [LF; RIO31XX- & RIO33XX-; regular specification; sinusoidal modulation at 10 kHz; wavelength tuning100 MHz p-p; grade4/5 alternative maximum15]10 %
Max. Output Power Modulation Index M_L [LF;RIO31XX- & RIO33XX-;Grade4 or Grade5 phase noise spec;Sinusoidal modulation at 10 kHz;wavelength tuning100 MHz p-p]15 %
Frequency Modulation Bandwidth f_mH [HF;RIO33XX- only;Sinusoidal modulation, AC coupled;via50 Ω SMC connector]0.01–200 MHz
Typ. Frequency Modulation Bandwidth f_mH [HF;RIO33XX- only;Sinusoidal modulation, AC coupled]100 MHz
Min. Frequency Tuning Efficiency η_mH [HF;RIO33XX- only;Sinusoidal modulation at 20 kHz;efficiency varies over bandwidth]100 MHz/V
Typ. Frequency Tuning Efficiency η_mH [HF;RIO33XX- only;Sinusoidal modulation at 20 kHz;efficiency varies over bandwidth]200 MHz/V
Min. Frequency Tuning Efficiency η_mH [HF;RIO33XX- only;Sinusoidal modulation at 500 kHz;efficiency varies over bandwidth]25 MHz/V
Typ. Frequency Tuning Efficiency η_mH [HF;RIO33XX- only;Sinusoidal modulation at 500 kHz;efficiency varies over bandwidth]50 MHz/V
Min. Frequency Tuning Efficiency η_mH [HF;RIO33XX- only;Sinusoidal modulation at 20–200 MHz;efficiency varies over bandwidth]50 MHz/V
Typ. Frequency Tuning Efficiency η_mH [HF;RIO33XX- only;Sinusoidal modulation at 20–200 MHz;efficiency varies over bandwidth]100 MHz/V
Max. Tuning Voltage Magnitude V_tuneH [HF;RIO33XX- only;AC coupled;SMC input]1 V_p-p
Max. Output Power Modulation Index M_H [HF;RIO33XX- only;Sinusoidal modulation at100 MHz;wavelength tuning100 MHz p-p;FM also modulates output power]4 %
Spectral Linewidth, FWHM Δλ_L [Grade1;Lorentzian linewidth model;At recommended TEC set temperature Tₛ and bias current I_b]≤15 kHz
Typ. Phase Noise PhN [Grade1;@10 Hz;1m OPD in SM fiber;RIO interferometric test setup;At recommended TEC set temperature Tₛ and bias current I_b]123 μrad/rt-Hz
Typ. Phase Noise PhN [Grade1;@200 Hz;1m OPD in SM fiber;RIO interferometric test setup;At recommended TEC set temperature Tₛ and bias current I_b]22 μrad/rt-Hz
Spectral Linewidth, FWHM Δλ_L [Grade3;Lorentzian linewidth model;At recommended TEC set temperature Tₛ and bias current I_b]≤5 kHz
Typ. Phase Noise PhN [Grade3;@10 Hz;1m OPD in SM fiber;RIO interferometric test setup;At recommended TEC set temperature Tₛ and bias current I_b]41 μrad/rt-Hz
Typ. Phase Noise PhN [Grade3;@200 Hz;1m OPD in SM fiber;RIO interferometric test setup;At recommended TEC set temperature Tₛ and bias current I_b]8 μrad/rt-Hz
Spectral Linewidth, FWHM Δλ_L [Grade4;Lorentzian linewidth model;At recommended TEC set temperature Tₛ and bias current I_b]≤2 kHz
Typ. Phase Noise PhN [Grade4;@10 Hz;1m OPD in SM fiber;RIO interferometric test setup;At recommended TEC set temperature Tₛ and bias current I_b]20 μrad/rt-Hz
Typ. Phase Noise PhN [Grade4;@200 Hz;1m OPD in SM fiber;RIO interferometric test setup;At recommended TEC set temperature Tₛ and bias current I_b]4 μrad/rt-Hz
Spectral Linewidth, FWHM Δλ_L [Grade5;10 mW output power version only;Lorentzian linewidth model;At recommended TEC set temperature Tₛ and bias current I_b]≤1 kHz
Typ. Phase Noise PhN [Grade5;10 mW output power version only;@10 Hz;1m OPD in SM fiber;RIO interferometric test setup;At recommended TEC set temperature Tₛ and bias current I_b]10 μrad/rt-Hz
Typ. Phase Noise PhN [Grade5;10 mW output power version only;@200 Hz;1m OPD in SM fiber;RIO interferometric test setup;At recommended TEC set temperature Tₛ and bias current I_b]2 μrad/rt-Hz
Operating Temperature Range T_c [Ambient]+15 to +50 ℃
Max. Power Consumption P_d [Over operating temperature range]4 W
Max. Total Current I_max [Over operating temperature range]1.0 A
Front Panel Connector F-1FC/APC bulkhead connector with dust cap
Front Panel Connector F-2 [LF frequency modulation option]BNC female connector
Front Panel Connector F-3 [HF frequency modulation option]SMC female connector
Back Panel Connector B-15V DC adaptor for power supply
Back Panel Connector B-2 [external monitoring and control]USB type B

Applications

Acoustic & seismic interferometric fiber optic sensing; Defense and security; Oil & Gas – exploration and production; LIDAR; Metrology; RF and microwave photonics; Coherent Communications

Key Features

Single longitudinal mode Center wavelength: 1530nm–1565nm, ITU-T DWDM 100 GHz C-band or custom Very low phase and frequency noise Very narrow linewidth, long coherence length Ultra-low RIN Excellent SMSR Unmatched wavelength stability over life and temperature Wavelength tunability Direct FM modulation Low sensitivity to vibration and acoustic noise SMF and PM fiber connector options Compact size, low power consumption Easy to set-up and use Digital controller and firmware with USB interface RoHS compliant

Datasheet

Product Datasheet
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Supplier Information

Af
Afrlaser
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Zhuhai AFR Technology Co., Ltd. (hereinafter referred to as "AFR") was founded in 2000 and is a national high-tech enterprise specializing in fiber optic components and chip integration. The senior management team is composed of top international talents in the fields of lasers, chips, and optical communications. The company's products are used in AI data centers, fiber optic communications, fiber lasers, autonomous driving, fiber optic sensing, medical equipment, scientific research, and other fields, and are widely sold to more than 40 countries and regions including Europe, America, and Japan. In 2017, AFR was listed on the ChiNext (stock code: 300620) and is one of the few suppliers of core components for submarine long-haul optical networks in the world. It has established innovation platforms such as the "National Enterprise Technology Center", "Guangdong Provincial Optoelectronic Device Engineering Technology Research Center", "Guangdong Provincial Academician Expert Enterprise Workstation", and "Postdoctoral Research Workstation". The company currently has thousands of sets of high-end production and processing equipment and a site area of over 130,000 square meters. AFR is headquartered in Zhuhai and currently has 6 wholly-owned subsidiaries: Milan AFR, Thailand AFR, Wuhan AFR, Hong Kong AFR, Jiahua Weijie, and Guangchen Technology, and 1 holding subsidiary: Baian Optoelectronics.

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RIO ORION™ Series 1550nm Low Phase Noise Narrow Linewidth Laser Source
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