RIO ORION™ Series 1064nm Narrow Linewidth Laser Module
The ORION™ devices are compact laser modules employing the RIO high-performance External Cavity Laser (ECL). This laser design is based on RIO’s proprietary planar technology (PLANEX™) and consists of a gain chip and a planar lightwave circuit including waveguides with Bragg gratings, forming a laser cavity with significant advantages. The ORION™ modules provide a stable, self-contained, easy-to-use alternative to complicated, sensitive to the ambient environment and expensive fiber laser sources, or other narrow linewidth laser alternatives. The ORION™ module employs low noise, digital laser bias current and temperature control circuitry to set and monitor laser performance. External monitoring and control can be accomplished via standard interfaces, using RIO-supplied software. The ORION™ module is an ideal source for seeding of high-power fiber and solid state lasers, second harmonic generation and optical parametric oscillators, spectroscopy and other industrial and scientific applications, coherent Doppler LIDAR, metrology and optical sensing.
Overview
Specifications
| Parameter | Value |
|---|---|
| Storage Temperature [Absolute Maximum Ratings] | -40 to +85 ℃ |
| Max. Module Supply Voltage [Absolute Maximum Ratings] | 5.5 V |
| Max. ESD-susceptibility [Absolute Maximum Ratings] | 500 V |
| Min. Fiber Bend Radius [Absolute Maximum Ratings] | 35 mm |
| Max. Tensile Strength, Fiber to the Package [Absolute Maximum Ratings] | 5 N |
| Typ. Power Stability over Case Temperature Range dP_out [At recommended TEC set temperature Tₛ and bias current I_b;5 to +50 ℃] | ±20 % |
| Center Wavelength λ [At recommended TEC set temperature Tₛ and bias current I_b] | 1061–1067 nm |
| Typ. Wavelength Tuning Range Δλ_T [At recommended TEC set temperature Tₛ and bias current I_b;via TEC temperature change;Phase continuous;some parameters change over tuning range;minimum +7 to -13 pm, non-symmetric] | 20 pm |
| Typ. Wavelength Stability over Case Temperature Range dλ [At recommended TEC set temperature Tₛ and bias current I_b;5 to +50 ℃] | ±50 pm |
| Typ. Relative Intensity Noise RIN [At recommended TEC set temperature Tₛ and bias current I_b;≥1 kHz] | -135 dB/Hz |
| Min. Side Mode Suppression Ratio SMSR [At recommended TEC set temperature Tₛ and bias current I_b;CW at specified P_out] | 50 dB |
| Min. Optical S/N Ratio [At recommended TEC set temperature Tₛ and bias current I_b;spontaneous noise at ±1 nm from λ;50 pm RBW] | 60 dB |
| Min. Polarization Extinction Ratio PER [At recommended TEC set temperature Tₛ and bias current I_b;PM option;polarization and connector key aligned to slow axis] | 17 dB |
| Typ. Polarization Extinction Ratio PER [At recommended TEC set temperature Tₛ and bias current I_b;PM option;polarization and connector key aligned to slow axis] | 20 dB |
| Min. Optical Isolation ISO [At recommended TEC set temperature Tₛ and bias current I_b] | 23 dB |
| Voltage Supply V_cc [At recommended TEC set temperature Tₛ and bias current I_b] | 4.75–5.25 V |
| Typ. Voltage Supply V_cc [At recommended TEC set temperature Tₛ and bias current I_b] | 5 V |
| Fast Frequency Modulation Bandwidth f_m [Modulation option;Sinusoidal modulation] | DC–100 |
| Min. Frequency Fast Tuning Efficiency η_m [Modulation option;Sinusoidal modulation at10 kHz;efficiency varies over bandwidth] | 50 MHz/V |
| Typ. Frequency Fast Tuning Efficiency η_m [Modulation option;Sinusoidal modulation at10 kHz;efficiency varies over bandwidth] | 100 MHz/V |
| Tuning Voltage Magnitude V_tune [Modulation option] | -4 to +4 V |
| Spectral Linewidth, FWHM Δλ_L [At recommended TEC set temperature Tₛ and bias current I_b;Grade1;Lorentzian linewidth model] | ≤15 kHz |
| Spectral Linewidth, FWHM Δλ_L [At recommended TEC set temperature Tₛ and bias current I_b;Grade3;Lorentzian linewidth model] | ≤5 kHz |
| Typ. Phase Noise PN [At recommended TEC set temperature Tₛ and bias current I_b;Grade3;@10 Hz] | 74 μrad/rt(Hz)-m |
| Typ. Phase Noise PN [At recommended TEC set temperature Tₛ and bias current I_b;Grade3;@200 Hz] | 13 μrad/rt(Hz)-m |
| Operating Temperature Range (Case) T_c | +5 to +50 ℃ |
| Max. Power Dissipation P_d [Over case temperature range] | 5 W |
| Max. Total Current I_max [Over case temperature range] | 1.1 A |
| Optical Connector [A;pigtailed fiber] | FC/APC |
| Interface Connector [B;power supply/external monitoring/control] | D-9 Female |
| Interface Pin 1 [SPI/RS-232/RS-485;4.75 V Min,5.25 V Max;Regulated,Low noise <100 mVp-p] | Vcc +5V |
| Interface Pin 2 [SPI] | MISO (output) |
| Interface Pin 2 [RS-232] | Tx |
| Interface Pin 2 [RS-485] | Data +; 1 kΩ diff impedance |
| Interface Pin 3 [SPI] | MOSI (input) |
| Interface Pin 3 [RS-232] | Rx |
| Interface Pin 3 [RS-485] | Data -; 1 kΩ diff impedance |
| Interface Pin 4 [SPI/RS-232/RS-485;1 kΩ impedance] | Modulation (input) |
| Interface Pin 5 [SPI/RS-232/RS-485] | GND |
| Interface Pin 6 [SPI/RS-232/RS-485;Active low;needs external pull up] | /Ready-Warning (output) |
| Interface Pin 7 [SPI;RS-232/RS-485 Not used] | /SPI SS (input) |
| Interface Pin 8 [SPI;RS-232/RS-485 Not used] | SPI CLK (input) |
| Interface Pin 9 [SPI/RS-232/RS-485;12K internal pull up to Vcc;active low] | /Enable (input) |
| Interface Configuration [SPI] | 4-wire SPI slave; MSB first; bit rate ≤2 MHz; MISO/MOSI 3.3V drive, TTL compatible; data centered on rising clk; /SS active low; CLK idle low, data clocked on rising edge |
| Interface Configuration [RS-232] | 9600 Baud; 8 Data Bits; No Parity Bit; 1 Stop Bit; No Flow Control; TTL asynchronous serial option available at request |
| Interface Configuration [RS-485] | 9600 Baud; 8 Data Bits; No Parity Bit; 1 Stop Bit; No Flow Control |
| Housing Material [standard; page 4 standalone text] | Electroless Nickel-plated Aluminum |
| Housing Material [optional; separate text on page 4] | Nickel-plated Copper |
| Pigtail Option [FC/APC; page 4 stand-alone text] | Hi 1060 SMF, 900 μm loose tube, 1 m |
| Pigtail Option [FC/APC; page 4 stand-alone text] | SM98 PMF PANDA, 900 μm loose tube, 1 m, key aligned to slow axis |
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