56G EML Integrated SOA
Dingxin Optoelectronics has independently developed an electroabsorption distributed-feedback laser diode chip integrating a semiconductor optical amplifier. The chip combines a DFB laser, electroabsorption modulator and optical amplifier, with bandwidth above 35GHz, power up to 17dBm, high bandwidth, high power and low threshold.
Specification Snapshot
Threshold Current Ith [CW;Tc=45℃]
typical:20 mA; max:25 mA
Center Wavelength λ0 [CW Idfb=100mA, CW Isoa=100mA, Vea=0V;Tc=45℃]
min:1284 nm; typical:1286 nm; max:1288 nm
Center Wavelength λ1 [CW Idfb=100mA, CW Isoa=100mA, Vea=0V;Tc=45℃]
min:1340 nm; typical:1342 nm; max:1344 nm
Side-mode Suppression Ratio SMSR [CW Idfb=100mA, CW Isoa=100mA, Vea=0V;Tc=45℃]
min:35 dB; typical:45 dB
Static Extinction Ratio DCER [CW Idfb=100mA, CW Isoa=100mA, Vea=-2V;Tc=45℃]
min:8 dB
3dB Bandwidth BW [-3dB;Tc=45℃]
min:35 GHz; typical:40 GHz
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Overview
Dingxin Optoelectronics has independently developed an electroabsorption distributed-feedback laser diode chip integrating a semiconductor optical amplifier. The chip combines a DFB laser, electroabsorption modulator and optical amplifier, with bandwidth above 35GHz, power up to 17dBm, high bandwidth, high power and low threshold.
Specifications
| Parameter | Value |
|---|---|
| Threshold Current Ith [CW;Tc=45℃] | typical:20 mA; max:25 mA |
| Operation Current (LD) Ilop [CW;Tc=45℃] | typical:100 mA; max:110 mA |
| Operation Current (SOA) Iaop [CW;Tc=45℃] | typical:100 mA; max:110 mA |
| Optical Output Power [CW Idfb=100mA, CW Isoa=100mA, Vea=0V;Tc=45℃] | min:35 mW; typical:50 mW |
| Center Wavelength λ0 [CW Idfb=100mA, CW Isoa=100mA, Vea=0V;Tc=45℃] | min:1284 nm; typical:1286 nm; max:1288 nm |
| Center Wavelength λ1 [CW Idfb=100mA, CW Isoa=100mA, Vea=0V;Tc=45℃] | min:1340 nm; typical:1342 nm; max:1344 nm |
| Side-mode Suppression Ratio SMSR [CW Idfb=100mA, CW Isoa=100mA, Vea=0V;Tc=45℃] | min:35 dB; typical:45 dB |
| Spectral Width (-20 dB) Δλ [CW Idfb=100mA, CW Isoa=100mA, Vea=0V;Tc=45℃] | typical:0.2 nm; max:0.4 nm |
| EAM Offset Voltage Vea [Tc=45℃] | min:-2 V; max:0 V |
| EAM P-P Modulation Voltage Vpp [Tc=45℃] | max:2 V |
| Static Extinction Ratio DCER [CW Idfb=100mA, CW Isoa=100mA, Vea=-2V;Tc=45℃] | min:8 dB |
| 3dB Bandwidth BW [-3dB;Tc=45℃] | min:35 GHz; typical:40 GHz |
| Wavelength Temp. Coefficient Δλ/ΔT [CW;Tc=45℃] | typical:0.09 nm/℃ |
| Far-field Angle (FWHM) θ// [Tc=45℃] | typical:28 Deg |
| Far-field Angle (FWHM) θ⊥ [Tc=45℃] | typical:38 Deg |
Applications
50G PON
Key Features
Monolithically Integrated Chip with DFB Laser, EA Modulator, and SOA Butt-Joint Struction High Power High 3dB Bandwidth High Reliability Low Threshold
Datasheet
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Supplier Information
Suzhou Dingxin Optoelectronic Technology Co., Ltd. is dedicated to the R&D and manufacturing of high-performance integrated optical chips. It possesses an industry-leading compound semiconductor process line supporting 3/4/6-inch wafer mass production, with capabilities covering chip design, crystal material growth, wafer fabrication, testing and packaging, providing one-stop solutions from wafer to device. Adopting an IDM model, the company enforces strict reliability standards. Its product portfolio includes EML, communication DFB, silicon photonics DFB, sensing, narrow linewidth laser chips, etc., applied in telecom, datacom, LiDAR, methane detection, and offers customized design and foundry services.
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