Silicon Galvanometer Mirror 532nm Series SI-SM-532-15-X
Silicon scanning mirrors have the advantages of light weight, small size, good thermal stability, and high mechanical strength. Applied to lasers, telescopes, microscopes, scanners, etc. Accurate optical control and image processing can be achieved by controlling parameters such as the direction and intensity of reflected light. Galvanometer scanning is the process of first incident the laser beam generated by the laser emission device onto the X-axis galvanometer, then reflecting it onto the Y-axis galvanometer. After secondary reflection by the Y-axis galvanometer, it can be projected onto the working plane, forming a scanning point. Then, the beam deflector composed of X and Y scanning heads is driven by a galvanometer motor to deflect the laser beam within the predetermined scanning range, so that the laser focal point with a certain power density leaves a permanent mark on the marking material, completing the scanning of the image. Each beam deflector has a specially designed reflector lens (coated with different optical films to reflect laser of different wavelengths), and the different deflection methods of the two lenses can enable the laser to scan different patterns and print different models.
Overview
Specifications
| Parameter | Value |
|---|---|
| Incident Beam Dia | 15 |
| Dim | 28 mm × 17 mm × 2.5 mm |
| X/Y Type | X |
| Wavelength | 532nm |
| Substrate Material | Silicon(Si) |
| Length Tolerance | +0.0/-0.1 |
| Width Tolerance | +0.0/-0.1 |
| Thk Tolerance | +0.0/-0.05 |
| Surface Quality | 60-40 |
| Surface Accuracy | λ/2 |
| Coating | Dielectric |
| Clear Aperture | 90% |
| Transmission Range [Substrate Material:Silicon(Si)] | 1.2-15μm |
| Refractive Index [Substrate Material:Silicon(Si);@10μm] | 3.41776%@10μm |
| Reflection Loss [Substrate Material:Silicon(Si);@10μm] | 46.1%@10μm |
| Structure [Substrate Material:Silicon(Si)] | Single crystal,synthetic |
| Cleavage Planes [Substrate Material:Silicon(Si)] | <111> |
| Density [Substrate Material:Silicon(Si)] | 2.33 g/cm³ |
| Melting Point [Substrate Material:Silicon(Si)] | 1414 ℃ |
| Thermal Conductivity [Substrate Material:Silicon(Si);@313K] | 163 @ 313K |
| Thermal Expansion [Substrate Material:Silicon(Si);@293K] | 2.6 @ 293K |
| Knoop Hardness [Substrate Material:Silicon(Si)] | 1100 kg/mm² |
| Specific Heat Capacity [Substrate Material:Silicon(Si)] | 712.8 J/(kg×K) |
| Dielectric Constant [Substrate Material:Silicon(Si);@f= 9.37GHz] | 13 @f= 9.37GHz |
| Young's Modulus (E) [Substrate Material:Silicon(Si)] | 130.91 GPa |
| Shear Modulus(G) [Substrate Material:Silicon(Si)] | 79.92 GPa |
| Bulk Modulus(K) [Substrate Material:Silicon(Si)] | 101.97 GPa |
| Poisson Coefficient [Substrate Material:Silicon(Si)] | 0.266 |
| Solubility [Substrate Material:Silicon(Si)] | None |
| Molecular Weight [Substrate Material:Silicon(Si)] | 28.09 g/mol |
Applications
Datasheet
Please provide your email to download the datasheet.
Invalid email format. Please try again.
Supplier Information
Loading...
Name
Phone
Organization
Use Case

Database Platform