ZPTP35C
ZPTP35C is a miniature phototransistor molded in water-clear plastic. Its spectrum is matched to infrared emitting diodes.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Breakdown Voltage BVCEO [Optoelectronic Characteristics ；Ta=25℃；IC=100μA；Ee=0mW/cm²] | min ：30 |
| Emitter-Collector Breakdown Voltage BVECO [Optoelectronic Characteristics ；Ta=25℃；IC=100μA；Ee=0mW/cm²] | min ：5 |
| Collector-Emitter Operating Voltage / Collector-Emitter Saturation Voltage (different source bilingual labels) VCE(SAT) [Optoelectronic Characteristics ；Ta=25℃；IC=2mA；Ee=1mW/cm²] | max ：0.4 |
| Rise Time tr [Optoelectronic Characteristics ；Ta=25℃；VCE=5V；IC=1mA；RL=1000Ω] | typical ：15 |
| Fall Time tf [Optoelectronic Characteristics ；Ta=25℃；VCE=5V；IC=1mA；RL=1000Ω] | typical ：15 |
| Collector-Dark Current Collector Dark Current ICEO [Optoelectronic Characteristics ；Ta=25℃；Ee=0mW/cm²；VCE=20V] | max ：100 |
| On State Collector Current IC(ON) [Optoelectronic Characteristics ；Ta=25℃；Ee=1mW/cm²；VCE=5V] | min ：0.86 |
| Detection Wavelength Range / Range of Spectral Bandwidth λ0.5 [Optoelectronic Characteristics ；Ta=25℃] | min ：400； max ：1100 |
| Wavelength of Peak Sensitivity λP [Optoelectronic Characteristics ；Ta=25℃] | typical ：940 |
Applications
Key Features
Datasheet
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Supplier Information
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