Spectroscopic Ellipsometer MetronSEE
MetronSEE spectroscopic ellipsometer is a high-speed, highly stable optical measurement instrument based on multilayer-film interference and ellipsometry. It characterizes film thickness and optical constants of transparent and semitransparent dielectric films and metal films, as well as optical constants of bulk materials. It suits semiconductor, liquid-crystal panel, solar-cell and optical-coating industries.
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Overview
MetronSEE spectroscopic ellipsometer is a high-speed, highly stable optical measurement instrument based on multilayer-film interference and ellipsometry. It characterizes film thickness and optical constants of transparent and semitransparent dielectric films and metal films, as well as optical constants of bulk materials. It suits semiconductor, liquid-crystal panel, solar-cell and optical-coating industries.
Specifications
| Parameter | Value |
|---|---|
| Instrument Configuration | Single Rotating Compensator Type |
| Measurement Wavelength Range | 245~1000nm(可扩展选配 380~1690nm,193~1000nm,) |
| Measurement Range | 1nm~10μm |
| Wavelength Interval | ≤1nm |
| Measurement Parameters | Psi&Delta,N&C&S,R,DOP |
| Large-Spot Dimensions | 1-8mm |
| Angle of Incidence | Fixed Angle of 65° |
| Single-Measurement Time | ≤10s |
| Data Acquisition and Analysis Software | User-Friendly, Comprehensive Software with Complete Dispersion Relations, Simulation of Nonideal Sample Structures, and Optical Modeling, Simulation and Fitting of Complex Anisotropy |
| Film Thickness Repeatability (1σ) [100nm Silicon-Based SiO₂ Film ,30 Measurements] | better than 0.005nm(100nm Silicon-Based SiO₂ Film ,30 Measurements ) |
| Refractive Index Repeatability (1σ) [100nm Silicon-Based SiO₂ Film ,n @ 633nm,30 Measurements] | better than 0.001nm(100nm Silicon-Based SiO₂ Film ,n @ 633nm,30 Measurements ) |
Applications
Advanced semiconductor processes: as CMOS devices continue to shrink, conventional SiO₂ gate dielectrics have reached physical limits because of unacceptable tunneling leakage currents and inherent reliability issues. High-dielectric-constant materials such as HfO₂ have therefore become a focus. Studying the electrical properties of high-dielectric films after different annealing processes is a key requirement for precise control of gate performance and memory reliability in advanced processes. This includes checking whether samples remain amorphous after processing, deriving dielectric constants from n&k and measuring equivalent oxide thickness. Measuring dispersion characteristics and n&k values of isolation layers such as SiO₂/SiNₓ also ensures optical matching between 3D NAND stacked layers to avoid signal interference. Optical components: in the composite multilayer antireflection coatings commonly used in AR/VR glasses and camera lenses, the thickness and n&k values of each layer are key variables determining whether the two functions meet requirements. Nondestructive, accurate joint measurement of film thickness and n&k is therefore needed to improve processes and yield. In particular, accurately determining the thickness and application-specific optical constants of ultrathin transition layers in multilayer antireflection coatings, such as MgF₂ at 5~10nm, and ultrathin corrosion-resistant optical films for infrared windows at 3~8nm supports optical coating design requirements and precise control of optical transmittance and reflectance. Photovoltaic cells: thin-film optoelectronic materials. Determining the thickness and application-specific optical constants of ultrathin layers—including the ultrathin tunneling oxide in TOPCon photovoltaic cells (SiO₂, 1~5nm, a photovoltaic-specific ultrathin film), the ultrathin intrinsic amorphous silicon layer in HJT cells, ultrathin organic emissive layers in OLED devices (EML, 5~9nm), and ultrathin encapsulation barrier layers (Al₂O₃, 3~7nm)—supports control of optoelectronic performance. These constants mainly include n&k values and dedicated parameters such as refractive-index uniformity of photovoltaic films and optical transmission coefficients of OLED films. They directly relate to photovoltaic conversion efficiency and are key to process optimization in the industry.
Key Features
Rotating-compensator technology precisely measures Psi&Delta (N&C&S), reflectance, transmittance and polarization-degree spectra. Typical coverage 245~1000nm, expandable to deep UV/IR. Extremely sensitive single-atomic-layer film-thickness accuracy. Millisecond spectral acquisition/analysis. Powerful graphical fitting. Expansion to millimeter large spots or micrometer microspots, with software containing optical constants for hundreds of typical materials and convenient interaction. Supports inline integration, flexibly adjustable 1-8mm spots and diverse applications.
Datasheet
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Supplier Information
Shanghai Ideaoptics Co., Ltd. is a national-level specialized and sophisticated 'Little Giant' enterprise, a deep-spectrum technology innovator. Devoted to the micro-nano optoelectronic field, it develops intelligent full-spectrum technology integrating photonics and AI, building an internationally leading deep-spectrum platform. The company provides comprehensive solutions from technology to products, including micro spectrometers, angle-resolved spectrometers, and confocal Raman spectrometers, widely applied in IC chips, optical chips, biochips, AR/VR, and advanced displays. Through joint R&D centers with universities, Ideaoptics continuously launches breakthrough products, serving over 3,000 customers and cooperating with 170+ semiconductor, advanced materials, and biomedical enterprises, aiming to advance photonic integration and empower semiconductor manufacturing.
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