G Series High-Power Semiconductor Laser
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Specifications
| Parameter | Value |
|---|---|
| Center wavelength [25℃; Center wavelength 1470±10 nm] | Typical:1470±10 |
| Center wavelength [25℃; Center wavelength 980±10 nm] | Typical:980±10 |
| Output Power [25℃; Center wavelength 1470±10 nm] | Typical:15 W |
| Output Power [25℃; Center wavelength 980±10 nm] | Typical:15 W |
| Spectral Width (90% Energy) [25℃] | Typical:<10.0 nm |
| Wavelength – Temperature Coefficient [25℃] | Typical:0.33 nm/℃ |
| Threshold current [25℃; Center wavelength 1470±10 nm] | Typical:0.5 A |
| Threshold current [25℃; Center wavelength 980±10 nm] | Typical:1.2 A |
| Operating current [25℃; Center wavelength 1470±10 nm] | Typical:9.2 A |
| Operating current [25℃; Center wavelength 980±10 nm] | Typical:21.5 A |
| Operating voltage [25℃; Center wavelength 1470±10 nm] | Typical:7.9 V |
| Operating voltage [25℃; Center wavelength 980±10 nm] | Typical:1.6 V |
| Slope efficiency [25℃; Center wavelength 1470±10 nm] | Typical:0.5 W / A |
| Slope efficiency [25℃; Center wavelength 980±10 nm] | Typical:0.7 W / A |
| Energy Conversion Efficiency [25℃; Center wavelength 1470±10 nm] | Typical:20.0 % |
| Energy Conversion Efficiency [25℃; Center wavelength 980±10 nm] | Typical:45.0 % |
| Aiming Beam - Output Power [25℃] | Typical:2 mW |
| Aiming Beam - Center Wavelength [25℃] | Typical:650±10 |
| Aiming Beam - Operating Voltage [25℃] | Typical:5 V |
| Fiber core diameter [25℃] | Typical:200 μm |
| Cladding diameter [25℃] | Typical:220 μm |
| Numerical aperture [25℃] | Typical:0.22 |
| Fiber length [25℃] | Typical:1-5 m |
| Operating temperature | Min:15 ℃；Max:35 ℃ |
| Operating Relative Humidity | Max:75 % |
| Storage temperature | Min:-20 ℃；Max:80 ℃ |
| Storage Relative Humidity | Max:90 % |
| Pin Soldering Temperature, Maximum 10 s | Max:250 ℃ |
Applications
Key Features
Datasheet
Supplier Information
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