G-Series High Power Laser Diode Module

G-Series High Power Laser Diode Module

Supplier
Tc-semi
Part Number
M1470/980/640±10-15/15/0.2-D200/22-G5W-PK
Category
Laser Diodes
Origin
China
Specification Snapshot
Threshold Current [25 ℃; Center wavelength 1470±10 nm]
Typical:0.5 A
Threshold Current [25 ℃; Center wavelength 980±10 nm]
Typical:1.4 A
Threshold Current [25 ℃; Center wavelength 640±10 nm]
Typical:0.2 A
Operating Current [25 ℃; Center wavelength 1470±10 nm]
Typical:9.2 A
Operating Current [25 ℃; Center wavelength 980±10 nm]
Typical:18 A
Operating Current [25 ℃; Center wavelength 640±10 nm]
Typical:0.5 A
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Specifications

ParameterValue
Center Wavelength [25 ℃; Center wavelength 1470±10 nm]Typical:1470±10
Center Wavelength [25 ℃; Center wavelength 980±10 nm]Typical:980±10
Center Wavelength [25 ℃; Center wavelength 640±10 nm]Typical:640±10
Output Power [25 ℃; Center wavelength 1470±10 nm]Typical:15 W
Output Power [25 ℃; Center wavelength 980±10 nm]Typical:15 W
Output Power [25 ℃; Center wavelength 640±10 nm]Typical:0.2 W
Spectral Width (90% Energy) FWHM [25 ℃]Typical:<10.0 nm
Wavelength Shift with Temperature [25 ℃]Typical:0.33 nm / ℃
Threshold Current [25 ℃; Center wavelength 1470±10 nm]Typical:0.5 A
Threshold Current [25 ℃; Center wavelength 980±10 nm]Typical:1.4 A
Threshold Current [25 ℃; Center wavelength 640±10 nm]Typical:0.2 A
Operating Current [25 ℃; Center wavelength 1470±10 nm]Typical:9.2 A
Operating Current [25 ℃; Center wavelength 980±10 nm]Typical:18 A
Operating Current [25 ℃; Center wavelength 640±10 nm]Typical:0.5 A
Operating Voltage [25 ℃; Center wavelength 1470±10 nm]Typical:7.9 V
Operating Voltage [25 ℃; Center wavelength 980±10 nm]Typical:1.7 V
Operating Voltage [25 ℃; Center wavelength 640±10 nm]Typical:2.3 V
Slope Efficiency [25 ℃; Center wavelength 1470±10 nm]Typical:1.7 W / A
Slope Efficiency [25 ℃; Center wavelength 980±10 nm]Typical:0.9 W / A
Slope Efficiency [25 ℃; Center wavelength 640±10 nm]Typical:0.7 W / A
Power Conversion Efficiency [25 ℃; Center wavelength 1470±10 nm]Typical:20.0 %
Power Conversion Efficiency [25 ℃; Center wavelength 980±10 nm]Typical:48.0 %
Power Conversion Efficiency [25 ℃; Center wavelength 640±10 nm]Typical:17.0 %
Core Diameter [25 ℃]Typical:200 μm
Numerical aperture NA [25 ℃]Typical:0.22
Fiber Length [25 ℃]Typical:1 - 5 m
Operating TemperatureMin:15 ℃;Max:35 ℃
Operating Relative HumidityMax:75 %
Storage TemperatureMin:-20 ℃;Max:80 ℃
Storage Relative HumidityMax:90 %
Lead Soldering Temperature (10 s max)Max:250 ℃

Applications

Medical applications

Key Features

Center wavelength 1470 / 980 / 640±10 nm High output power of 15 / 15 / 0.2 W 200 μm / 0.22 NA multimode optical fiber

Datasheet

Product Datasheet
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Supplier Information

Tc
Tc-semi
View Supplier →
Beijing TC-Semi Semiconductor Technology Co., Ltd. was founded in 2011. It is a national high-tech enterprise and a "Specialized, Refined, Distinctive, and Innovative" enterprise in Beijing. For more than ten years, it has been focusing on the R&D, production, and sales of high-end semiconductor laser devices and systems. The company has two major production bases in Beijing and Tianjin, with complete equipment and production lines from chip packaging to fiber coupling packaging. The high-end semiconductor lasers produced by the company range in power from several watts to several kilowatts, with wavelengths covering from 375nm to 1940nm in the blue-violet to near-infrared bands. They are widely used in laser direct imaging (LDI), LiDAR, laser medical aesthetics, laser plastic welding & soldering, pump sources for solid-state and fiber lasers, blue laser processing, and many other fields. In the future, Beijing TC-Semi aims at main tracks such as LiDAR, laser medical aesthetics, and laser direct imaging, actively participates in the development of autonomous driving and medical aesthetics industries, leverages its core technological advantages, and sets sail with the trend!

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