For gas analyzers 1mm Photosensitive area 800-2600nm Detector
The photodetector based on a gallium arsenide metal-semiconductor field-effect transistor (MESFET) offers very high responsivity, excellent quantum efficiency, high sensitivity, medium speed, very high gain and low power consumption, outperforming comparable devices such as photodiodes and phototransistors.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Photosensitive surface Φ | typical:1 mm |
| Spectral Range λ | typical:800-2600 nm |
| Responsivity Re [V_R=0.5V,λ=1310nm] | typical:0.5 mA/mW |
| Responsivity Re [V_R=0.5V,λ=2300nm] | typical:1.1 mA/mW |
| Response Time Tr [R_L=50Ω, VR=0.5V] | typical:100 ns |
| Dark Current ID [V_R=0.5V] | typical:5 uA |
| Reverse breakdown voltage V_BR [I_R=10uA] | typical:1 V |
| Junction capacitance Cj [f=1MHz, V_R=0.5V] | typical:0.5 nF |
| Operating Voltage V_R | typical:0-0.5 v |
| Shunt impedance Rsh [V_R=10mV] | typical:3 KΩ |
| Package | TO-46 |
Applications
Key Features
Datasheet
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Supplier Information
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