High quality 0.3mm 800-2600nm InGaAs Detector
An optoelectronic semiconductor device used to detect and often measure radiant energy, such as light.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Photosensitive surface Φ | typical:0.3 mm |
| Spectral Range λ | typical:800-2600 nm |
| Responsivity Re [V_R=0.2V,λ=850nm] | typical:0.21 mA/mW |
| Responsivity Re [V_R=0.2V,λ=1310nm] | typical:0.45 mA/mW |
| Responsivity Re [V_R=0.2V,λ=2300nm] | typical:1.3 mA/mW |
| Responsivity Re [V_R=0.2V,λ=2600nm] | typical:0.23 mA/mW |
| Response Time Tr [R_L=50Ω, V_R=0.2V] | typical:12 ns |
| Dark Current ID [V_R=0V] | typical:40 nA |
| Dark Current ID [V_R=0.2V] | typical:300 nA |
| Reverse breakdown voltage VBR [I_R=10uA] | typical:2 V |
| Saturation optical power Ps [V_R =0.2V] | typical:4 mW |
| Operating Voltage V_R | typical:0-0.2 V |
| Package | Sealing TO-CAN Package |
Applications
Key Features
Datasheet
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Supplier Information
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