Indium gallium arsenide 0.5mm 800-2600nm Photodetector
A photodiode is a semiconductor device whose current is nearly linear with received optical power.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Photosensitive surface Φ | typical:500 um |
| Spectral Range λ | typical:800-2600 nm |
| Responsivity Re [V_R=0.5V,λ=1310nm] | typical:0.5 mA/mW |
| Responsivity Re [V_R=0.5V,λ=2300nm] | typical:1.1 mA/mW |
| Response Time Tr [R_L=50Ω, VR=0.5V] | typical:20 ns |
| Dark Current ID [V_R=0.5V] | typical:1 uA |
| Reverse breakdown voltage V_BR [I_R=10uA] | typical:1 V |
| Junction capacitance Cj [f=1MHz, V_R=0.5V] | typical:0.2 nF |
| Operating Voltage V_R | typical:0-0.5 v |
| Shunt impedance Rsh [V_R=10mV] | typical:30 KΩ |
| Package | TO-46 |
Applications
Key Features
Datasheet
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Supplier Information
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