For small-angle X Ray scattering 10mm Near-infrared silicon photodiode detector
Silicon PIN photodiode sensitive over the ultraviolet to near-infrared spectral range.
Save to Favorites
Overview
Datasheet
Please provide your email to download the datasheet.
Invalid email format. Please try again.
Supplier Information
Related Products
-
Stellar-PD300C,PD300C-1.5W,PD300C-3W,PD300C-UV0 Photodiode Laser Power Meter
Photodiodes
Shafan-oe
Meter Head-Power-Supply Method: USB-B interface, 5V1A phone charger Meter Head-Battery Characteristics: 3800MAH; charging time 10 hours; discharge time 24 hours Meter Head - Display: 3.5-inch true-color LCD, 480*320, multi-level backlight
LCD with Chinese/English interface; pW~W power measurement; wavelength coverage 250nm-1800nm; automatic and manual ranging; NIST traceability; convenient self-calibration; optional fiber adapters (ST, FC, LC, SC); compact design and rotating stand for easy placement
-
50um Indium Gallium Arsenide Avalanche Photodiode OAPD-X-X-P-XX-X
Photodiodes
O-send
Absolute Maximum Ratings - Storage Temperature: -55°C~+85°C Absolute Maximum Ratings - Operating temperature: -40°C~+85°C Absolute Maximum Ratings-Reverse Current [CW]: 3mA
The 50um InGaAs APD pigtail module is widely used in OTDR, CATV and optical repeater equipment.
-
75um Indium Gallium Arsenide Photodiode OPD-1-X-X-X-XX-X-X
Photodiodes
O-send
Absolute Maximum Ratings - Storage Temperature: -40°C~+100°C Absolute Maximum Ratings - Operating temperature: -40°C~+85°C Absolute Maximum Ratings - Reverse Voltage [CW]: 30V
75um InGaAs photodiodes are widely used in cable television optical reception, analog transmission, optical communications and test instruments.
-
InGaAs Photo Diode OAPD-X-X-P-XX-X
Photodiodes
O-send
21°C General Characteristics at - Wavelength Range [1550nm（ Type ）]: min:1100 nm；max:1650 nm General Characteristics at 21°C-Peak Sensitivity: 1550nm 21°C General Characteristics at - Storage Temperature: 60°C~125°C
This product is suitable for ranging optics, communication systems, optical coherence tomography and low-light detection. Sizes of 80um, 200um and 300um are available. Peak responsivity occurs at 1550nm.
-
Silicon Avalanche Photodiode OAPD-2-X-X-X-XX-X
Photodiodes
O-send
Detection Range: 400~1100nm Dark current: typical:0.2 Responsivity: min:0.40 A/W；typical:0.55 A/W
The fiber-coupled silicon avalanche photodiode couples to single-mode or multimode fiber. Various active diameters are available, including 200um and 500um. It is commonly used in telecommunications, data communications, optical communications, test instruments and OTDR.
Related Articles
The 850 nm and 940 nm infrared narrow‑bandpass filters launched by Innovation Photoelectric are core optical components specially designed for day‑and‑night security cameras. They effectively eliminate image interference during visible‑light and infrared‑illumination switching, delivering stable round‑the‑clock monitoring performance.
Shandong Optochip specializes in independent R&D of industrial-grade optical chips for optical communication and fiber sensing. Our business includes overseas chip tape-out, domestic precision device packaging
BEIJING JIEPU TREND supplies YAG+Er:YAG+YAG bonded composite slab laser crystals for high‑power solid‑state laser systems. The monolithic slab consists of two undoped YAG end‑cap layers and a central Er‑doped YAG gain segment. The overall dimension is 9 mm×9 mm×9 mm.
Founded in November 2017, TIANJIN H‑CHIP TECHNOLOGY GROUP CORPORATION is a professional manufacturing‑service provider dedicated to micro‑nano optoelectronic chips. It holds multiple prestigious qualifications, including National High‑Tech Enterprise, one of Tianjin’s first Gazelle‑certified Enterprises, Specialized‑Refined‑Differentiated‑Innovative SME, and Leading Enterprise for Strategic Emerging Industries.
Loading...
Name
Phone
Organization
Use Case
Database Platform