3mm2 Silicon photodiode
The Si-Pin photodiode provides a high-speed response above 1GHz at low bias (Vr=2V). Low capacitance below 1 pF makes it suitable for high-speed transimpedance amplifiers.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Responsivity R [Vr= 0V / @900] | min:0.45 A/W；typical:1.00 A/W |
| Dark Current Id [Vr= -5V] | typical:15 nA；max:40 nA |
| Operating wavelength Range λ | min:350 nm；typical:900 nm；max:1100 nm |
| Photosensitive surface φ | typical:3 mm × 3 mm |
| Capacitance C [Vr= -5V] | typical:15 pf |
| Operating Voltage Vr | max:0.9 V |
| Operating Temperature Top | min:-30 ℃；max:+65 ℃ |
| Storage temperature Tst | min:-40 ℃；max:+85 ℃ |
Applications
Key Features
Datasheet
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Supplier Information
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