Third-generation image intensifier with two contact plates ATOM-G3-E245GA
A third-generation image intensifier is a vacuum optoelectronic device that amplifies weak optical signals. It consists of a photocathode, a microchannel plate (MCP), a phosphor screen and a high-voltage power supply. Incident light causes photoelectron emission from the photocathode. An electric field accelerates these electrons into the MCP channels, where collisions with the channel walls produce secondary electrons. Repeated collisions multiply the electrons. The multiplied electrons leaving the MCP are accelerated onto the phosphor screen, which converts them into photons and produces an amplified optical image. This product combines a new-generation ALD-MCP core with a negative-electron-affinity GaAs semiconductor photocathode to provide distinctive sensitivity, signal-to-noise ratio and lifetime. Compared with second-generation tubes, third-generation tubes better match the spectral distribution of starlight. GaAs near-infrared response in the 800nm band gives excellent performance under moonless starlight, revealing more scene information and improving contrast. Zhongke Yuanzi's two-contact third-generation image intensifier integrates a highly sensitive GaAs photocathode, a new low-noise, high-performance ALD-MCP and Al2O3 ion-barrier film technology. Its double proximity-focused package provides excellent MTF, high signal-to-noise ratio and long life for night vision at lower illumination levels.
Save to Favorites
Overview
Specifications
| Parameter | Value |
|---|---|
| Figure of merit FOM | min: 2000 |
| Sensitivity [@2856K] | min:2000 μA/lm |
| Radiant sensitivity [@880nm] | min:90 mA/W |
| Resolving power | min:68 lp/mm |
| High-light resolution [@200lx] | min:45 lp/mm |
| Signal-to-noise ratio | min: 30 |
| Operating Voltage | 2.0~3.4 V |
| Operating Current | max:25 mA |
| Brightness Gain | 15000-25000 cd/m²/lx |
| Max Output Brightness | 6~12 cd/m² |
| Equivalent background illuminance | max:0.25 μlx |
| Operating illuminance range | 1×10-5~ 3×104 |
| Brightness Uniformity [2856K] | max: 3:1 |
| Cathode active diameter | min:17.5 mm |
| Spectral response range | 500-900 nm |
| Power supply | Gating |
| Phosphor | P43 |
| Weight | max:85 g |
| Power Dissipation | max:75 mW |
| Reliability | min:10000 h |
Applications
Key Features
Datasheet
Supplier Information
Related Products
-
PD-500B
Optical Detectors
Inxuntech
Center wavelength: 800~1700nm Bandwidth （3dB）: 500MHz Common-Mode Rejection Ratio: >25dB
Yingxun Xinguang's balanced photodetection module combines precision symmetrical optics, matched high-frequency InGaAs photodiodes and an ultra-low-noise transimpedance amplifier (TIA). This high-performance module provides high bandwidth and excellent common-mode noise rejection.
-
Whisper Silicon Solid-State Detector Module
Optical Detectors
Pavilionintegration
Input Supplier Voltage: +/-5V Photoelectric Sensitivity [Typical]: 6.0x107 V/W（Typical） Effective Sensing Srea: Ф1/Ф3mm
As the semiconductor industry advances, solid-state detectors (SSDs), including silicon photomultipliers (SiPMs) and other semiconductor photodetectors, are developing rapidly. Heat-dissipation modules, PCBs, special optics and other functional modules can be added to their configuration for fluorescence detection in life-science instruments, providing excellent performance and reliability. Used together with PIC's innovative, compact, low-noise diode lasers, SiPM detectors support clinical, diagnostic and research applications in moving toward smaller, highly integrated and highly reliable systems.
-
Whisper Silicon Solid-State Detector Module
Optical Detectors
Pavilionintegration
Input Supplier Voltage: +/-5V Photoelectric Sensitivity [Typical]: 6.0x107 V/W（Typical） Effective Sensing Srea: Ф1/Ф3mm
As the semiconductor industry advances, solid-state detectors (SSDs), including silicon photomultipliers (SiPMs) and other semiconductor photodetectors, are developing rapidly. Heat-dissipation modules, PCBs, special optics and other functional modules can be added to their configuration for fluorescence detection in life-science instruments, providing excellent performance and reliability. Used together with PIC's innovative, compact, low-noise diode lasers, SiPM detectors support clinical, diagnostic and research applications in moving toward smaller, highly integrated and highly reliable systems.
-
1000um Indium Gallium Arsenide Detector OPD-1-X-X-X-XX-X
Optical Detectors
O-send
Absolute Maximum Ratings - Storage Temperature: -40°C~+100°C Absolute Maximum Ratings - Operating temperature: -40°C~+85°C Absolute Maximum Ratings - Reverse Voltage [CW]: 30V
The 1000um InGaAs detector is mainly used to manufacture power meters. Its detection wavelength ranges from 800nm to 1700nm, and its photosensitive area is 1000um.
-
2000um Indium Gallium Arsenide Detector Die OTC-PD-2000-TOXX-XX
Optical Detectors
O-send
Responsivity [Vr=-5V]: min:0.70；typical:0.85 Dark current: max:0.7 mA Photosensitive Area Diameter: 2000um
2000μm InGaAs PIN detectors in TO-CAN packages are widely used in the manufacture of optical communication, test and measurement equipment.
Related Articles
Electro-optic deflectors (EODs) are optical devices used to steer or deflect light beams by applying an electric field to a specialized optical crystal. Unlike mechanical beam steering systems that rely on moving mirrors, electro-optic deflectors enable high-speed, non-mechanical beam control with exceptional precision and responsiveness. They are widely used in laser scanning, optical communications, microscopy, laser printing, spectroscopy, and scientific research, where rapid and accurate laser beam positioning is essential.
The 850 nm and 940 nm infrared narrow‑bandpass filters launched by Innovation Photoelectric are core optical components specially designed for day‑and‑night security cameras. They effectively eliminate image interference during visible‑light and infrared‑illumination switching, delivering stable round‑the‑clock monitoring performance.
Within cutting‑edge ultrafast photonics research, asynchronous optical sampling (ASOPS) and synchronous sampling serve as fundamental technologies for terahertz excitation detection, coherent Raman imaging and other time‑resolved spectroscopy experiments.
Shanghai Connet Laser Technology Co., Ltd. focuses on technological innovation, delivering cutting-edge photonic products & solutions for industrial lasers, LiDAR, fiber optic sensing, coherent telecom, cold atom physics and precision spectroscopy research & mass manufacturing.
Loading...
Name
Phone
Organization
Use Case
Database Platform