KTF Crystal Basic characteristics
The company's KTF (potassium terbium fluoride) crystal is a high-performance, low-absorption magneto-optical crystal developed for high-power laser isolators. Independently developed crystal growth technology gives it low absorption, enabling stable operation of high-power devices without complex cooling systems. It provides a reliable core material for high-power laser systems and supports improved device performance and broader applications.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Basic Properties - Crystal Structure | Orthorhombic Crystal System |
| Basic Properties - Unit Cell Parameters | a ≈ 12.82 Å, b ≈ 6.404 Å, c ≈ 10.616 Å |
| Basic Properties-Melting Point | ~1172 °C |
| Basic Properties - Mohs Hardness | ~5 Mohs |
| Basic Properties - Density | ~3.0 g/cm³ |
| Basic Characteristics - Thermal Conductivity [Thermal Conductivity Is Lowest in the Z Direction, Which Is the Main Direction of Thermal Effects] | κ₁₁ ≈ 3.3 W/m/K, κ₂₂ ≈ 3.4 W/m/K, κ₃₃ ≈ 2.5 W/m/K |
| Basic Characteristics - Thermal Expansion Coefficient | α₁₁ ≈ 11.8 x 10⁻⁶ /K, α₂₂ ≈ 9.5 x 10⁻⁶ /K, α₃₃ ≈ 0.6 x 10⁻⁶ /K |
| Basic Properties-SHG Phase-Matching Range | ~0.53 - 4.0 μm (type I & type II) |
| Basic Properties - Thermo-Optic Coefficient | dn₃/dT ≈ 14.7 x 10⁻⁶ /K, dn₁/dT ≈ 6.0 x 10⁻⁶ /K |
| Basic Properties-Bulk Absorption Coefficient [One key advantage of KTF is extremely low absorption for high-power applications; @ 1064 nm] | < 0.1 %/cm @ 1064 nm |
| Basic Properties-Acceptance Angle (Aperture Angle) | ~ 25 mrad·cm (type II, 1064nm SHG) |
| Basic Properties - Temperature Bandwidth | ~ 25 °C·cm (type II, 1064nm SHG) |
| Basic Properties-Acceptance Spectral Width | ~ 6.5 cm⁻¹·cm (type II, 1064nm SHG) |
| Basic Properties-Walk-Off Angle [No walk-off at noncritical phase matching (θ=90°), a major advantage; walk-off occurs with critical phase matching.] | ~ 0° (type II NCPM, 1064nm SHG) |
| Basic Properties-Nonlinear Optical Coefficient [A large nonlinear coefficient provides the basis for efficient frequency conversion.] | d₃₃ ≈ 14.7 pm/V,；d₃₂ ≈ 4.7 pm/V,；d₃₁ ≈ 2.6 pm/V,；d₂₄ ≈ 3.6 pm/V |
| Basic Properties-Nonzero d Coefficient [The mm2 point group has 5 independent nonzero nonlinear optical tensor elements.] | d₁₅, d₂₄, d₃₁, d₃₂, d₃₃ |
| Basic Properties-Electro-Optic Coefficient [Large linear electro-optic coefficient, suitable for modulators and Q switches.] | r₃₃ ≈ 36.3 pm/V, r₂₃ ≈ 15.7 pm/V, r₁₃ ≈ 9.5 pm/V |
| Basic Properties - Half-Wave Voltage (Vπ) [Voltage applied to the electro-optic device to produce a phase retardation of π.] | ~ 1.5 - 3.0 kV (depends on geometry and orientation) |
| Basic Properties-Resistivity | ~ 10¹² - 10¹⁵ Ω·cm (anisotropic) |
| Basic Properties-Relative Permittivity [Anisotropic. Dielectric constant is highest along the Z axis; @ 1kHz)] | ε₁₁/ε₀ ≈ 13, ε₂₂/ε₀ ≈ 13, ε₃₃/ε₀ ≈ 28 (@ 1kHz) |
Datasheet
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Supplier Information
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