GaSe Crystal
GaSe, or gallium selenide crystal, is a high-performance nonlinear optical crystal with excellent optical properties in the infrared, especially the mid- and far-infrared regions. Its broad infrared transmission range, high nonlinear optical coefficient and moderate birefringence make it a key material for infrared laser frequency conversion.
Specification Snapshot
Crystal Structure
Hexagonal Crystal System
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Overview
GaSe, or gallium selenide crystal, is a high-performance nonlinear optical crystal with excellent optical properties in the infrared, especially the mid- and far-infrared regions. Its broad infrared transmission range, high nonlinear optical coefficient and moderate birefringence make it a key material for infrared laser frequency conversion.
Specifications
| Parameter | Value |
|---|---|
| Crystal Structure | Hexagonal Crystal System |
| Unit Cell Parameters [Room temperature] | a=b=3.755 Å,c=15.94 Å,Z=4 |
| Melting point | 960 ℃ |
| Mohs Hardness | 2-3 |
| Density | 4.55 g/cm³ |
| Thermal conductivity [Room temperature] | 0.5 W/m·K |
| Thermal Expansion Coefficient α∥/α⊥ [25-300℃] | α∥=17×10⁻⁶/K,α⊥=7×10⁻⁶/K |
| Transmission Band | 0.65-18 μm |
| Bandgap Energy | 2.0 eV |
| Refractive index [10.6 μm;@ 10.6 μm] | ~2.6 @ 10.6 μm |
| Nonlinear Optical Coefficient d₂₂ | d₂₂=54 pm/V |
| Birefringence [10.6 μm;@ 10.6 μm] | ~0.35 @ 10.6 μm |
| Damage threshold [1.06 μm, 10 ns;@ 1.06 μm, 10 ns] | 20 MW/cm² @ 1.06 μm, 10 ns |
| Acceptance angle [Type I, 1064 nm SHG] | 1.2 mrad·cm (Type I, 1064 nm SHG) |
| Temperature Bandwidth [1064 nm SHG] | ~25 ℃·cm (1064 nm SHG) |
| Walk-off angle [Type I, 10.6 μm DFG] | 2.5° (Type I, 10.6 μm DFG) |
| Electrical resistivity [Room temperature] | >10¹⁰ Ω·cm |
| Dimensional tolerance [Reception Custom] | (Φ±0.1mm)×(L+0.2/-0.1mm), Reception Custom |
| Effective Clear Aperture [Central Region] | >90% Central Region |
| Surface finish [MIL-PRF-13830B Standard] | 20-10 (MIL-PRF-13830B Standard ) |
| Flatness [633 nm;@633 nm] | ≤λ/8 @633 nm |
| Transmitted Wavefront Distortion [633 nm;@633 nm] | ≤λ/8 @633 nm |
| Parallelism | 20″ |
| Perpendicularity | 15′ |
| Angle Tolerance | ≤0.5° |
| Chamfer | ≤0.2mm×45° |
| Edge chipping | ≤0.1mm |
| Damage threshold [1.06 μm, 10ns, 10 Hz (polished substrate); @ 1.06 μm, 10ns, 10 Hz (polished substrate)] | > 20 MW/cm² @ 1.06 μm, 10ns, 10 Hz (polished substrate). |
| Bulk Absorption Coefficient [10.6 μm;@ 10.6 μm] | < 0.5 cm⁻¹ @ 10.6 μm |
| Coating [Reception Custom] | 2-12μm Antireflection Coating Available (Customization Accepted) |
Applications
I. Infrared lasers and frequency conversion.1. Mid/far-IR generation: GaSe is a core DFG and OPO element for molecular spectroscopy and environmental trace-gas monitoring. Nonlinear conversion efficiently transforms near-IR pump light into3-18μm output, enabling ppb(one-billionth)-level gas detection for air-pollution monitoring, industrial process control and explosives detection.2. Tunable IR lasers: As an OPO crystal in research systems, it provides widely tunable output for basic research and material analysis. Broad transmission and high nonlinearity support efficient conversion. II. Spectroscopy and sensing.1. High-resolution IR spectroscopy: Integration into FTIR and laser spectrometers uses IR transmission and nonlinearity to improve molecular-fingerprint detection for reaction studies and new-material characterization.2. Process/safety monitoring: Specific-wavelength GaSe-generated IR enables real-time online monitoring of key process gases and early warning of hazardous-chemical leaks. III. Research and medicine.1. Frontier research: High nonlinearity and broad transmission support nonlinear/quantum optics, optical parametric amplification and entangled-photon generation.2. Diagnosis/treatment: IR optical coherence tomography and photothermal therapy are exploratory applications; high IR transmission offers potential for deep-tissue imaging and minimally invasive treatment.
Key Features
Our company has advanced GaSe growth/processing through optimized vapor transport, producing large, high-optical-quality GaSe single crystals without common layered-growth defects. Measurements indicate excellent GaSe transmission at 3-18μm, high nonlinearity, and improved damage threshold, especially for mid-infrared generation and terahertz generation; supports spectroscopy, environmental monitoring, and defense/security.
Datasheet
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Supplier Information
Jingzhi Optoelectronics is a high-tech enterprise focusing on the R&D and production of optoelectronic materials and core devices. Aiming to break through the "bottleneck" technologies of high-end laser crystal materials and devices, the company is committed to achieving domestic substitution of key materials in fields such as semiconductor lithography and precision micromachining. Its main products include magneto-optical crystals (KTF, CeF₃), deep ultraviolet nonlinear optical crystals (modified BBO, CLBO), and high-power laser isolators, which are widely used in high-power laser systems, semiconductor lithography, EUV light sources, laser detection, defense, and new energy fields.
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