Photodetector ：2~12um Indium Arsenide Antimonide InAsSb Amplified Type Adjustable Gain Cooled Infrared InAsSb-2/12um-1x1-AG8C4
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Specifications
| Parameter | Value |
|---|---|
| Photosensitive Range | 2~12um |
| Photosensitive Area Dimensions | 1mmx1mm |
| Responsivity [@6.7um] | 0.55A/W@6.7um |
| Response Time Constant | 3ns |
| D* | 1.0X10^10cm·Hz^1/2/W |
| GAIN [Hi-Z Load] | 100V/A~10000V/A |
| GAIN [50Q Load] | 50V/A~5000V/A |
| Signal amplitude [Hi-Z Load] | 0~10V |
| Signal amplitude [50Ω Load] | 0~5V |
| Gain adjustment Method | Rotary Stepped Adjustment :0~40dB， In Total 8 Settings |
| NEP | 1.0X10^-11(W/Hz^1/2) |
| Cooling method | Four-Stage Electronic Cooling |
| TEC Cooling temperature | -73℃ |
| Detector Net weight | 0.2kg |
| Operating temperature | -40~70℃ |
| Storage temperature | -40~85℃ |
| Overall dimensions | 3.54"X 1.88" X1.58" (89.9 mm X47.8 mm X40 mm) |
| Power input interface | 12-Core LEMO EGG-2B |
| Indicator light | Cooling status indicator (red: waiting/green: cooling complete) |
| Power supply | LDS12C-A(DP),+12VDC Regulated Linear Power Supply,7W,220VAC |
| Signal interface | SMA Female connector |
| Gain adjustment | Programmable Control |
| Support-Rod Interface | M4 |
| Optical interface | SM1X1 |
Datasheet
Supplier Information
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