Photodetector: 190~1100nm, Silicon, UV High-Speed Type, Fixed Gain Si-0.19/1.1um-4.1mm-50M
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Specifications
| Parameter | Value |
|---|---|
| Photosensitive Range | 190~1000nm |
| Photosensitive Area Dimensions | Φ4.1mm |
| Bandwidth Range | DC~50MHz |
| GAIN [Hi-Z Load] | 100kV/A |
| GAIN [50Q Load] | 50kV/A |
| Signal amplitude [Hi-Z Load] | 0~3.6V |
| Signal amplitude [50Ω Load] | 0~1.8V |
| NEP | 1.5X10^-14W/Hz^1/2 |
| Photosensitive surface Depth | 0.09"(2.2mm) |
| Operating temperature | 10~50℃ |
| Storage temperature | 10~50℃ |
| Detector Net weight | 0.06kg |
| Overall dimensions | 2.79"X1.96"X0.89"(70.9mmX49.9mmX22.5mm) |
| Power input interface | LUMBERG RSMV3FEMALE |
| Power supply | LDS12B(DP),±12VDC Regulated Linear Power Supply 6W,220VAC |
| Power switch | Slide switch with LED indicator |
| Signal interface | BNC Female connector |
| Support-Rod Interface | M4X2 |
| Optical interface | SM1X1 SM0.5X1 |
Datasheet
Supplier Information
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