Photodetector: Silicon Carbide, 220~350nm, Ultraviolet, Amplified, Adjustable Gain SiC-220/350nm-0.5X0.5mm-AG8
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Specifications
| Parameter | Value |
|---|---|
| Photosensitive Range | 220nm~350nm |
| Photosensitive Area Dimensions | Φ0.25mm |
| Gain range [Hi-Z Load] | 1.51kV/A~4.75MV/A |
| Gain range [50Ω Load] | 0.75kV/A~2.38MV/A |
| Signal amplitude [Hi-Z Load] | 0~10V |
| Signal amplitude [50Ω Load] | 0~5V |
| Gain adjustment Method | Rotary step adjustment: 0~70dB in 10dB steps, 8 steps in total. Bandwidth is inversely proportional to gain. |
| Detector Net weight | 0.10kg |
| Operating temperature | -55~200℃ |
| Storage temperature | -55~200℃ |
| Overall dimensions | 50mmX38.9mmX70mm |
| Signal interface | SMA cable |
Datasheet
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Supplier Information
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