Photodetector : Silicon (Si)- Bias - Standard Type ，200nm-1100nm DET36A2(DP) DET100A2(DP)
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Specifications
| Parameter | Value |
|---|---|
| Photosensitive Range | 320~1100nm |
| Photosensitive Area Dimensions | Φ10.0mm10MHz |
| Bandwidth Range | 10MHZ |
| Rise time [@50Ω] | 35ns |
| NEP | 2.4X10^-14W/Hz^1/2 |
| Dark current [Typ.] | 0.9nA(Typ.) |
| Dark current [Max] | 10nA(Max) |
| Junction capacitance [Typ.] | 150pF(Typ.) |
| Bias voltage | 10V |
| Output Current | 0~10mA |
| Output Voltage [Hi-Z] | ~9V(Hi-Z) |
| Output Voltage [50Ω] | ~170mV(50Ω) |
| Photosensitive surface Depth | 0.13"(3.3mm) |
| Detector Net weight | 0.1kg |
| Operating temperature | 10~40℃ |
| Storage temperature | -20~70℃ |
| Undervoltage Specification Vout [Hi-Z] | Vout ≤9V(Hi-Z) |
| Undervoltage Specification Vout [50Ω] | Vout ≤170mV(50Ω) |
| Overall dimensions | 2.79" X1.96*X0.89"(70.9 mm X49.8 mm X22.5mm) |
| Supply battery | A23,12VDC,40mAh |
| Power switch | Slide switch |
| Signal interface | BNC Female connector |
| Battery Monitoring | Momentary Button |
| Support-Rod Interface | M4X2 |
Datasheet
Supplier Information
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