Photodetector 800~1700nm, Indium Gallium Arsenide, Amplified Adjustable Gain, Entirely Domestically Produced Components PDA-IGS-C1
Specification Snapshot
Operating temperature
10~40℃
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Specifications
| Parameter | Value |
|---|---|
| Photosensitive Range | 800~1700nm |
| Photosensitive Area Dimensions | 2mm |
| Peak wavelength [Typ.] | 1500 nm(Typ.) |
| Amplifier GBP | 230MHz |
| Bandwidth Range | DC~6.7MHz |
| Gain range [Hi-Z Load] | 1.51kV/A~4.75MV/A |
| Gain range [50Ω Load] | 0.75kV/A~2.38MV/A |
| Signal amplitude [Hi-Z Load] | 0~5V |
| Signal amplitude [50Ω Load] | 0~2.5V |
| Gain adjustment Method | Programmable Adjustment, 8 Settings; Bandwidth Is Inversely Proportional to Gain |
| Photosensitive surface Depth | 0.06"(1.5mm) |
| Detector Net weight | 0.01kg |
| Operating temperature | 10~40℃ |
| Storage temperature | -20~70℃ |
| Overall dimensions | 1.47"X1.47" (37.34mmX37.34mm) |
| Power input interface | XH2.54mm 3Pin Terminal |
| Power switch | Slide switch with LED indicator |
| Signal interface | MMCX-KWE Female Right-Angle Connector |
| Gain adjustment | Programmable Adjustment |
Datasheet
Product Datasheet
PDF
Supplier Information
Focusing on the R&D and industrialization of high-end optoelectronic instruments, continuously promoting breakthroughs and implementation of optoelectronic technology.
With spectral technology as its core, the company has built a complete product system covering detectors, lasers, precision optical measurement and other fields, with industry-leading technical indicators, while providing high-quality products and professional technical support to spectral developers.
The company is committed to serving national strategies and cutting-edge science and technology. Its high-end instruments and customized solutions have been deeply applied in quantum optics, fusion energy, large-scale scientific facilities and other advanced research and future industrial fields.
Adhering to the philosophy of "technological innovation, quality-oriented", DoSpectrum Optics is continuously promoting breakthroughs and industrialization of optoelectronic technology.
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