High-Power Semiconductor Laser Bar Chip -976nm-300W-CW
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Specifications
| Parameter | Value |
|---|---|
| Center wavelength λ_c [25°C] | Min ：966 nm； Typical ：976 nm； Max ：986 nm |
| Output Power P_opt [25°C] | Typical ：300 W |
| Operating mode [25°C] | Typical ：CW/QCW |
| Number of Emitting Units [25°C] | Typical ：62 |
| Emitting Region Width W [25°C] | Typical ：120 μm |
| Emission Spot Period P [25°C] | Typical ：150 μm |
| Fill factor F [25°C] | Typical ：80 % |
| Bar Length B [25°C] | Min ：9900 μm； Typical ：10000 μm； Max ：10100 μm |
| Cavity length L [25°C] | Min ：1480 μm； Typical ：1500 μm； Max ：1520 μm |
| Thickness D [25°C] | Min ：125 μm； Typical ：135 μm； Max ：145 μm |
| Threshold current Iₜₕ [25°C] | Typical ：25 A； Max ：30 A |
| Operating current Iₒₚ [25°C] | Typical ：300 A |
| Operating voltage Vₒₚ [25°C] | Typical ：1.5 V； Max ：1.6 V |
| Spectral width △λ [25°C；FWHM] | Typical ：4 nm |
| Slope efficiency η [25°C] | Min ：1.08 W/A； Typical ：1.12 W/A |
| Polarization [25°C] | Typical ：TE |
| Operating temperature [25°C] | Typical ：25 °C |
Applications
Key Features
Datasheet
Supplier Information
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