High-Power Semiconductor Laser Bar Chip -940nm-50W-CW
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Specifications
| Parameter | Value |
|---|---|
| Center wavelength λ_c [25°C] | Min ：930 nm； Typical ：940 nm； Max ：950 nm |
| Output Power P_opt [25°C] | Typical ：50 W |
| Operating mode [25°C] | Typical ：CW/QCW |
| Number of Emitting Units [25°C] | Typical ：19 |
| Emitting Region Width W [25°C] | Typical ：120 μm |
| Emission Spot Period P [25°C] | Typical ：500 μm |
| Fill factor F [25°C] | Typical ：24 % |
| Bar Length B [25°C] | Min ：9900 μm； Typical ：10000 μm； Max ：10100 μm |
| Cavity length L [25°C] | Min ：980 μm； Typical ：1000 μm； Max ：1020 μm |
| Thickness D [25°C] | Min ：125 μm； Typical ：135 μm； Max ：145 μm |
| Threshold current Iₜₕ [25°C] | Typical ：7 A； Max ：9 A |
| Operating current Iₒₚ [25°C] | Typical ：50 A |
| Operating voltage Vₒₚ [25°C] | Typical ：1.65 V； Max ：1.85 V |
| Spectral width △λ [25°C；FWHM] | Typical ：4 nm |
| Slope efficiency η [25°C] | Typical ：1.15 W/A |
| Electro-optical conversion efficiency η_c [25°C] | Min ：55 %； Typical ：60 % |
| Fast axis Divergence angle θ⊥ [25°C；FWHM] | Typical ：35 Deg |
| Slow axis Divergence angle θ∥ [25°C；FWHM] | Typical ：8 Deg |
| Polarization [25°C] | Typical ：TE |
| Operating temperature [25°C] | Typical ：25 °C |
Applications
Key Features
Datasheet
Supplier Information
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