High-Power Semiconductor Single-Emitter Chip -1940nm-2W-CW
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Specifications
| Parameter | Value |
|---|---|
| Center wavelength λ_c [After chip packaging (COS); 25°C; CW current mode] | Typical ：1940 nm |
| Output Power P_opt [After chip packaging (COS); 25°C; CW current mode] | Typical ：2 W |
| Operating mode [After chip packaging (COS); 25°C; CW current mode] | Typical ：CW |
| Polarization [After chip packaging (COS); 25°C; CW current mode] | Typical ：TE |
| Emitting Region Width E.W [After chip packaging (COS); 25°C; CW current mode] | Typical ：190 μm |
| Cavity length L [After chip packaging (COS); 25°C; CW current mode] | Typical ：3000 μm |
| Width F [After chip packaging (COS); 25°C; CW current mode] | Typical ：400 μm |
| Thickness D [After chip packaging (COS); 25°C; CW current mode] | Min ：125 μm； Typical ：135 μm； Max ：145 μm |
| Threshold current Iₜₕ [After chip packaging (COS); 25°C; CW current mode] | Typical ：2.7 A； Max ：3.0 A |
| Operating current Iₒₚ [After chip packaging (COS); 25°C; CW current mode] | Typical ：12.5 A； Max ：13.0 A |
| Operating voltage Vₒₚ [After chip packaging (COS); 25°C; CW current mode] | Typical ：1.12 V； Max ：1.2 V |
| Spectral width △λ [After chip packaging (COS); 25°C; CW current mode; FWHM] | Typical ：10 nm |
| Slope efficiency η [After chip packaging (COS); 25°C; CW current mode] | Typical ：0.22 W/A |
| Electro-optical conversion efficiency η_c [After chip packaging (COS); 25°C; CW current mode] | Typical ：15 % |
| Fast axis Divergence angle θ⊥ [After chip packaging (COS); 25°C; CW current mode; FWHM] | Typical ：39 Deg； Max ：44 Deg |
| Slow axis Divergence angle θ∥ [After chip packaging (COS); 25°C; CW current mode; FWHM] | Typical ：9 Deg； Max ：12 Deg |
| Operating temperature [After chip packaging (COS); 25°C; CW current mode] | Typical ：25 °C |
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Key Features
Datasheet
Supplier Information
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