7-PIN Laser Diode with APD BLPD-P
InGaAs 1310nm pin diode
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Overview
Specifications
| Parameter | Value |
|---|---|
| Saturation Power Ps | 10 mW |
| Forward Current If | 10 mA |
| Reverse Voltage Vr | 30 V |
| Reverse Current Ir | 5 mA |
| Operating Temperature Top | -40~+85 ℃ |
| Storage Temperature Tstg | -40~+85 ℃ |
| Operating Wavelength λ | min:1100 nm；max:1700 nm |
| Responsivity R [Vr=-5V,λ=1310nm] | min:0.85 A/W；typical:0.90 A/W |
| Responsivity R [Vr=-5V,λ=1550nm] | min:0.90 A/W；typical:0.95 A/W |
| Dark Current Id [Vr=5V] | typical:0.2；max:0.5 |
| Capacitance C [Vr=5V, f=1MHz] | typical:0.6 pF；max:0.75 pF |
| Rise time/Fall time Tr/Tf [Vr=5V,10～90%] | max:0.3 ns |
| Bandwidth Bw [Vr=5V,50Ω] | min:2.5 GHz |
| Composite Second Order Beat CSO | typical:-70 dB |
| Composite Third Order Beat CTB | typical:-80 dB |
| Operating Voltage V | typical:-5 V |
| Optical Return Loss RL [λ=1310/1550nm] | min:40 dB |
Applications
Key Features
Datasheet
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