HDSLM80R DC1064
HDSLM80R-DC1064 is optimized for high-power laser applications. Compared with the company's traditional products, its peak-power damage threshold is increased to 100W/cm². Retaining the HDSLM range's high stability, it has a carefully redesigned heat-dissipation structure for high-power processing within the wavelength range. Applications include optogenetics, biological imaging, nanostructure etching, micro/nanomachining, stealth cutting of glass/silicon carbide/wafers, special-material processing research, beam and optical-field control, direct-write laser lithography and precision phase measurement. ◆ Reflectivity increased to 89%~92%. ◆ Diffraction efficiency up to 85%. ◆ Peak-power damage threshold increased to 100W/cm². ◆ Iterative development for high-power lasers. ◆ Optimized cooling for high-power processing.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Modulation Type | Phase type |
| Pixel size | 8μm |
| Resolution | 1920*1200 |
| Reflectance | Typ：89%；Max：92% |
| Applicable wavelength | 1064±30nm |
| Diffraction Efficiency [16 Levels] | 85% |
| Phase Capability [@1064nm] | 2.48π@1064nm |
| Phase Stability | ~0.003π |
| Phase Linearity | R²>99.98% |
| Damage threshold | 100W/cm² |
| Calibration Wavelength | A calibration curve for each 1nm wavelength; HDMI one-click calibration |
| Data Bit depth | 8bit / 10bit |
Datasheet
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