Blank Photomask
A blank mask becomes a photomask after a pattern is formed on its surface;
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Overview
Specifications
| Parameter | Value |
|---|---|
| Composition - SiO2 [Synthetic Quartz] | 100% |
| OH Content [Synthetic Quartz] | <100ppm |
| Impurities [Synthetic Quartz] | Each of the Eight Impurity Elements Al, Ca, Cu, Fe, Na, K, Li and Mg in the Quartz-glass Substrate Is <0.01ppm |
| Transmittance [Synthetic Quartz; 450nm] | ≥90.0% @450nm |
| Stress Birefringence [Synthetic Quartz] | ≤2 nm/cm |
| Striae [Synthetic Quartz] | No Striae Permitted |
| Particle Inhomogeneity [Synthetic Quartz] | No Inhomogeneous Particles Permitted |
| Bubbles and Opaque Inclusions [Synthetic Quartz] | None |
| Length [6025 Specification; GBT 34178-2017 Clause 4.1] | 152.0±0.2 mm |
| Width [6025 Specification; GBT 34178-2017 Clause 4.1] | 152.0±0.2 mm |
| Thickness [6025 Specification; GBT 34178-2017 Clause 4.1] | 6.35±0.1 mm |
| Vertex Angle [6025 Specification; GBT 34178-2017 Clause 4.1] | 90°±3′ |
| Vertex Radius [6025 Specification; GBT 34178-2017 Clause 4.1] | 2.0~3.0 mm |
| Chamfer Straight-edge Length [6025 Specification; GBT 34178-2017 Clause 4.1] | 0.3~0.6 mm |
| Optical Quality Area [Front Face/Back Face] | 5mm Margin on Both Sides |
| Flatness [Front Face/Back Face] | ≤2μm |
| Roughness [Front Face/Back Face] | ≤0.3nm |
| Roughness [Four Side Faces] | ≤30nm |
| Total Thickness Variation TTV [Front and Back Faces] | Thickness across the Front and Back Faces ≤2μm |
| Low-reflectance Cr Coating - Quality Area | 132 mm × 132 mm |
| Low-reflectance Cr Coating - Thickness | 1050±100 Å |
| Low-reflectance Cr Coating - Optical Density @450nm | 3.0±0.2 |
| Low-reflectance Cr Coating - Reflectance @436nm | 11.0±2.0 % |
| Low-reflectance Cr Coating - Pinholes | ≥1.0μm, None Detected |
| Low-reflectance Cr Coating - Etching Time [Wet Etching] | 50±3 s, Wet Etching |
Applications
Key Features
Datasheet
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