Illumination Glass

Average output power: >20W Process performance: min: 30μm Specification of electricity supply: 220V/50HZ/8KW

TGV (Through Glass Via), a glass perforation device; a combination of laser-induced modifications and chemical etching; and the formation of a massive perforated structure inside the glass. Extensively used in chip wrapping and glass base plate processing Medium

Side metalification; product size 2.825*1* 0.127; unit mm; small size; 0.3*1* 0.127. Horizontal and vertical face-to-face accuracy > 5 μm

Lined on thermal deposition; metalted surfaces to Ti, Pt, Au, Cr, Cu, Sn, Ag or Ausn welds, etc.; thickness and composition can be customised

Bore film electrical resistance material: TaN、Pt、NiCr Face resistance: 10Ω/□、50Ω/□、100Ω/□ Precision Absorption: Laser offset (0.5 per cent)

1 small electrical resistance; 50 large electrical resistance; 5 per cent precision; 10 per cent special precision; 0.5 per cent precision of electrons

Membrane structure: Cr/Ni/Au=100~150nm/300~400nm/500~600nm, 1200~1300nm, 2800~3000nm; Ti/Pt/Au=100~150nm/200~300nm/500~600nm, 1200~1300nm, 2,800~3000nm Membrane: Ion spatter, evaporated deposition with ion aid Graphical technology: Semiconductor optical, laser etching; nano mask + photogram; lift-off

Submount, pottery thermal sunk, ceramic capacitor, thin membrane electrical resistance; metalization patterns; pottery piece products such as prefabricated gold tin; size, performance parameters, etc., can be tailored to the customer ' s needs