InGaAs Single-Photon Detector Series
The InGaAs single-photon avalanche photodiode SPAD is a dedicated device for shortwave
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Overview
Specifications
| Parameter | Value |
|---|---|
| Reverse Breakdown Voltage - Test Condition: 22°C±3°C,IR=10A | Min 50V; Typ 70V; Max 90V |
| Dark Current - Test Condition: 22°C±3°C, M=10 | Max 0.1nA |
| Responsivity - Test Condition: 1550nm, M=1, 1μW | Min 0.8A/W; Typ 0.85A/W |
| Breakdown Voltage Temperature Coefficient | Max 0.15V/K |
Applications
Key Features
Datasheet
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Supplier Information
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