InGaAs APD Multi-Element Linear Array Detector Chip OVQT-LAA16
This high-performance front-illuminated planar InGaAs APD photodiode chip series provides high responsivity
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Overview
Specifications
| Parameter | Value |
|---|---|
| Pixel Pitch | Typ 70μm |
| Responsivity Uniformity | Typ 10%; Max 30% |
| Gain - Test Condition: VR=VBR-3V | Min 10; Typ 13 |
| Maximum Gain | Min 20; Typ 35 |
| Dark Current - Test Condition: VR=VBR-3V | Typ 10nA; Max 50nA |
| Adjacent Pixel Crosstalk | Max 10% |
| Capacitance | Typ 4.0pF |
| -3 dB Bandwidth - Test Condition: M=10, RL=50Ω | Min 0.4GHz; Typ 0.8GHz |
| Reverse Breakdown Voltage - Test Condition: Id=10μA | 40~80V |
| 击穿电压一致性 | Typ 0.5V; Max 1.0V |
| Breakdown Voltage Temperature Coefficient - Test Condition: -40°C to +85°C | Typ 0.1V/℃ |
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Key Features
Datasheet
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Supplier Information
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