InGaAs APD Quadrant Photodetector
The InGaAs APD quadrant photodetector chip is a high-performance near-infrared photoelectric position
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Overview
Specifications
| Parameter | Value |
|---|---|
| Pixel Photosensitive Area Size | Typ 1000μm |
| Pixel Gap | Typ 100μm |
| Breakdown Voltage - Test Condition: ID=100μA, no illumination | 40~60V |
| Responsivity - Test Condition: λ=1.55μm, M=1 | Min 0.9A/W |
| Response Time - Test Condition: f=1MHz,RL=50Ω | Typ 1.5ns; Max 3ns |
| Dark Current - Test Condition: M=10 | Typ 25nA; Max 100nA |
| Crosstalk | Typ 10% |
| Capacitance - Test Condition: f=1MHz, M=10 | Typ 12pF; Max 15pF |
| Maximum Available Gain | Min 20 |
| Breakdown Voltage Temperature Coefficient - Test Condition: -40°C to +85°C | Typ 0.1V/℃; Max 0.15V/℃ |
Applications
Key Features
Datasheet
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Supplier Information
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