830nm 1W Fiber-Coupled Diode Laser K830F02FN-1.000W
The K830F02FN-1.000W is an 830nm 1W fiber-coupled semiconductor laser developed by BWT (Beijing Kiplin Optoelectronics Technology Co., Ltd.). It couples the output of a high-efficiency semiconductor laser chip into a 50μm/125μm multimode optical fiber with a numerical aperture of 0.14, delivering 1W of fiber output power. The device adopts a compact 2-pin metal package with a mounting flange (4-φ2.6 holes), and is equipped with a 0.5m fiber protected by a 0.9mm PVC jacket and terminated with a standard ST connector. With a typical electro-optical efficiency of 40%, a low threshold current of 0.2A and a slope efficiency of 0.9W/A, it provides stable near-infrared output over a base plate operating temperature of 15°C to 35°C, making it an ideal laser source for printing and scientific research applications.
Save to Favorites
Overview
Specifications
| Parameter | Value |
|---|---|
| Output Power (W) | ≥1W |
| Center Wavelength (nm) | 830±10nm |
| Spectral Width FWHM (nm) | 6nm |
| Wavelength Temperature Drift Coefficient (nm/°C) | 0.3 |
| Threshold Current (A) | 0.2A |
| Operating Current (A) | ≤1.5A |
| Operating Voltage (V) | ≤2.0V |
| Slope Efficiency (W/A) | 0.9W/A |
| Fiber core diameter (μm) | 50μm |
| Fiber Cladding Diameter (μm) | 125μm |
| Numerical Aperture (NA) | 0.14 |
| Fiber Length (m) | 0.5m |
| Fiber Jacket | 0.9mm PVC |
| Bending Radius (mm) | ≥50mm |
| Fiber Connector | ST |
| ESD (V) | ≤500V |
| Storage Temperature (°C) | -20~70°C |
| Soldering Temperature (°C) | ≤260°C |
| Soldering Time (s) | ≤10s |
| Operating Temperature (°C) | 15~35°C |
| Pin 1 | Laser (+) |
| Pin 2 | Laser (-) |
| Pin Diameter (mm) | 0.8mm |
| Pin Pitch (mm) | 2.54mm |
| Outline Dimensions (mm) | 26.0(L)×12.7(W)×12.5(H) |
| Mounting Holes (mm) | 4-φ2.6 |
| Test Conditions | 1W@25°C |
Applications
Key Features
Datasheet
Supplier Information
Related Products
-
C Series High-Power Semiconductor Laser
Laser Diodes
Tc-semi
Output Power [25℃]: Typical:15 W Center wavelength [25℃]: Typical:1550±10 Spectral Width (90% Energy) [25℃]: Typical:<10.0 nm
-
G Series High-Power Semiconductor Laser
Laser Diodes
Tc-semi
Output Power [25℃]: Typical:5 W Center wavelength [25℃]: Typical:1550±10 Spectral Width (90% Energy) [25℃]: Typical:<6.0 nm
-
V Series High-Power Semiconductor Laser
Laser Diodes
Tc-semi
Output Power [20℃]: Typical:70 W Center wavelength [20℃]: Typical:520±10 Spectral width (FWHM) [20℃]: Typical:＜6.0
-
D Series High-Power Semiconductor Laser
Laser Diodes
Tc-semi
Output Power [25℃]: Typical:120 W Center wavelength [25℃]: Typical:878.6±0.5 Spectral width (FWHM) [25℃]: Typical:<0.5 nm
-
T-Series Laser Diode Module
Laser Diodes
Tc-semi
Output Power [25℃]: Typical:30 W Center Wavelength [25℃]: Min:878.1 nm；Max:879.1 nm Spectral Width (FWHM) [25℃]: Typical:<0.5 nm
Related Articles
In photonics and laser technology, devices that manipulate optical signals via the electro-optic effect form the backbone of precision optical systems. Electro-optic phase modulators and electro-optic deflectors are two prominent examples of this device category. As a critical hardware solution for high-speed, high-accuracy laser beam direction control, electro-optic deflectors are widely deployed across industrial and research settings. Below is a detailed overview of their core structure, key performance drivers, and primary use cases.
As a top‑tier supplier of tunable laser chips, Shandong Zhongxin Optoelectronics Technology Company has newly launched the world’s first budget‑friendly fiber‑Bragg‑grating (FBG) demodulator and scanning module.
A laser bar is an array semiconductor laser chip integrated with dozens of emitters, which realizes hundred-watt quasi-continuous output on a single chip. With regular emitter arrangement and controllable fill factor, integrated thermal design and superior wall-plug efficiency compared to single chips, it acts as the core light source for high-power pumping, medical lasers and precision processing.
BEIJING JIEPU TREND supplies YAG+Er:YAG+YAG bonded composite slab laser crystals for high‑power solid‑state laser systems. The monolithic slab consists of two undoped YAG end‑cap layers and a central Er‑doped YAG gain segment. The overall dimension is 9 mm×9 mm×9 mm.
Loading...
Name
Phone
Organization
Use Case
Database Platform