EB-QDFB-20-4550-50-001

EB-QDFB-20-4550-50-001

Part Number
EB-QDFB-20-4550-50-001
Category
Laser Diodes
Origin
China

EB-QDFB-20-4550-50-001 is a high-performance laser diode designed for applications requiring precision and reliability.

Specification Snapshot
Output Power
5-30mW
Threshold Current
30mA
Operating Voltage
10V
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Overview

EB-QDFB-20-4550-50-001 is a high-performance laser diode designed for applications requiring precision and reliability.

Specifications

ParameterValue
Center Wavelength4580/4587/4602
Tuning Range2cm^-1
Output Power5-30mW
Operation ModeContinuous/Pulse
Side Mode Suppression Ratio20dB
Wavelength-Temperature Drift Coefficient0.3nm/°C
Wavelength-Current Drift Coefficient0.07nm/mA
Slope Efficiency1mW/mA
Threshold Current30mA
Operating CurrentIth+10mA
Operating Voltage10V
Emitter Width3μm
Cavity Length1mm
Width400μm
Emitter Number1
Thickness135-155μm
Operating Temperature Range10-50

Applications

1. Gas Detection 2. Space Communications

Key Features

1. High Reliability 2. Low Power Consumption 3. High Power

Datasheet

Product Datasheet
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Supplier Information

Ev
Everbrightphotonics
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<p>Suzhou Changguang Huaxin Optoelectronics Technology Co., Ltd. was established in 2012 and is located in Suzhou, Jiangsu. The company is mainly dedicated to the research and development, production and sales of high-power semiconductor laser chips, high-efficiency lidar and 3D sensing chips, high-speed optical communication semiconductor laser chips, devices and systems. Products are widely used in: industrial laser pumping, advanced laser manufacturing equipment, biomedical cosmetology, high-speed optical communications, machine vision and sensing, etc.</p>

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