Ceramic Heat Sink for High-Power Semiconductor Lasers
觉芯Email High-Conductivity Reliable/Solder-Stable COS Diode-Laser Heatsinks for High-Power Chip Cooling,Electrode Links,Predeposited Solder/Assembly Positioning.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Substrate Material | AlN, BeO, SiC, etc. |
| Pattern and Dimensions [Customizable to Customer Requirements] | Customizable to Customer Requirements |
| Metal Layer [Customizable to Customer Requirements] | Standard Cu/Ni/Au;Cu75±15μm,Au Meets Wire-Bonding Requirements;Other Structures/Thicknesses Customizable |
| AuSn Solder Layer [Customizable to Customer Requirements] | Standard Process Au(75±5wt%)Sn; Ratio and Thickness Customizable to Customer Requirements |
| Solder Layer Pattern Accuracy | ±30μm |
| Thermal Conductivity [Substrate Material AlN; Source Matrix Column 4] | ＞ 200 |
| Thermal Conductivity [Substrate Material AlN; Source Matrix Column 5] | ＞ 230 |
| Thermal Conductivity [Substrate Material SiC; Source Matrix Column 6] | >300 W/(m·K) |
| Thermal Conductivity [Substrate Material BeO; Source Matrix Column 7] | ＞ 250 |
| Roughness [Substrate Material AlN; Source Matrix Column 4] | ＜ 0.3 |
| Roughness [Substrate Material AlN; Source Matrix Column 5] | ＜ 0.3 |
| Roughness [Substrate Material SiC; Source Matrix Column 6] | <0.3 μm |
| Roughness [Substrate Material BeO; Source Matrix Column 7] | ＜ 0.3 |
| Thermal Expansion Coefficient [Substrate material AlN; 40 ~ 400 ℃; source-matrix column 4] | 4.6 ×10⁻⁶/K |
| Thermal Expansion Coefficient [Substrate material AlN; 40 ~ 400 ℃; source-matrix column 5] | 4.6 ×10⁻⁶/K |
| Thermal Expansion Coefficient [Substrate Material SiC; 40~400℃; Source Matrix Column 6] | 4~5 ×10⁻⁶/K |
| Thermal Expansion Coefficient [Substrate Material BeO; 40~400℃; Source Matrix Column 7] | 6.8 ×10⁻⁶/K |
| Thermal Expansion Coefficient [Substrate material AlN; 40 ~ 800 ℃; source-matrix column 4] | 5.2 ×10⁻⁶/K |
| Thermal Expansion Coefficient [Substrate material AlN; 40 ~ 800 ℃; source-matrix column 5] | 5.2 ×10⁻⁶/K |
| Thermal Expansion Coefficient [Substrate Material SiC; 40~800℃; Source Matrix Column 6] | 4~5 ×10⁻⁶/K |
| Thermal Expansion Coefficient [Substrate Material BeO; 40~800℃; Source Matrix Column 7] | 8.4 ×10⁻⁶/K |
| Substrate Thickness [Substrate Material AlN; Source Matrix Column 4] | 0.15~ 1.5 mm |
| Substrate Thickness [Substrate Material AlN; Source Matrix Column 5] | 0.15~ 1.5 mm |
| Substrate Thickness [Substrate Material SiC; Source Matrix Column 6] | 0.15~ 1.5 mm |
| Substrate Thickness [Substrate Material BeO; Source Matrix Column 7] | 0.15~ 1.5 mm |
Datasheet
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Supplier Information
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