NPD33-2500
NPD33-2500 Photodiode Array with Phased Array. Layouts for Incremental/Absolute,Sine-Cosine,ABZUVW/Hybrid Encoders;Coating/QFN/Precision Molded/COB/Bare Chip;PD Array/PTr Array/+AMP Signals
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Overview
Specifications
| Parameter | Value |
|---|---|
| Description [Parameter image_03 independent-model selection table; NPD33-2500] | Pure PD Array, Incremental, 2500 Lines |
| Code-Disk Outer Diameter [Parameter image_03 independent-model selection table; NPD33-2500] | Ø33 |
| Code-Disk Optical Radius R0 [Parameter image_03 independent-model selection table; NPD33-2500] | 14.5 mm |
| Photocurrent (U/V/W) I_L1 [Pre-Specification;Electro-optical Characteristics;Ta=25°C;E_v=1000Lux;V_CC=5V;CIE Standard Illuminant A,2856K(Chinese Source Says Halogen Lamp/English Says Tungsten Lamp,Both Retained)] | typical:0.9 μA |
| Photocurrent (A+/B+/A-/B-) I_L2 [Pre-Specification;Electro-optical Characteristics;Ta=25°C;E_v=1000Lux;V_CC=5V;CIE Standard Illuminant A,2856K(Chinese Source Says Halogen Lamp/English Says Tungsten Lamp,Both Retained)] | typical:0.7 μA |
| Photocurrent (Z+/Z-) I_L3 [Pre-Specification;Electro-optical Characteristics;Ta=25°C;E_v=1000Lux;V_CC=5V;CIE Standard Illuminant A,2856K(Chinese Source Says Halogen Lamp/English Says Tungsten Lamp,Both Retained)] | typical:0.3 μA |
| Dark Current I_D [Pre-Specification；Electro-optical characteristics；Ta=25°C；V_R=5V] | typical:2 nA |
| Reverse Breakdown Voltage BVR [Pre-Specification；Electro-optical characteristics；Ta=25°C；E_v=0；I_R=100μA] | min:30 V |
| Forward Voltage Drop I_F [Pre-Specification;Electro-optical characteristics;Ta=25°C;I_F=10mA;Original I_F Retained] | typical:0.8 V |
| Spectral Responsivity λ [Pre-Specification；Electro-optical characteristics；Ta=25°C] | min:400 nm; max:1000 nm |
| Peak Photosensitivity Wavelength λ_p [Pre-Specification；Electro-optical characteristics；Ta=25°C] | typical:850 nm |
Applications
Key Features
Datasheet
Supplier Information
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