NPD6211
NPD6211 Array of Six High-Sensitivity Photodiodes on PCB.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Reverse Voltage V_R [MAXIMUM RATINGS; Ta=25°C; Photoelectric Sensor of Each Cell] | 30 V |
| Operating Temperature Topr. [MAXIMUM RATINGS; Ta=25°C; Photoelectric Sensor of Each Cell] | -20~+70 °C |
| Storage Temperature Tstg. [MAXIMUM RATINGS; Ta=25°C; Photoelectric Sensor of Each Cell] | -30~+80 °C |
| Soldering Temperature Tsol. [MAXIMUM RATINGS; Ta=25°C; Photoelectric Sensor of Each Cell; No More Than 5 Seconds at Solder Pads] | 260 °C |
| Photocurrent I_L [Electro-optical Characteristics;Ta=25°C;E_v=1000Lux;V_CC=5V;CIE Standard Illuminant A,2856K(Chinese Source Says Halogen Lamp/English Says Tungsten Lamp,Both Retained)] | min:4 μA |
| Dark Current I_D [Electro-optical characteristics；Ta=25°C；V_R=5V] | max:100 nA |
| Spectral Responsivity λ [Electro-optical characteristics；Ta=25°C] | min:400 nm; max:1000 nm |
| Peak Photosensitivity Wavelength λ_p [Electro-optical characteristics；Ta=25°C] | typical:850 nm |
| Rise Time t_r [Electro-optical characteristics；Ta=25°C；V_CC=5V；R_L=5kΩ] | typical:3 μs; max:5 μs |
| Fall Time t_f [Electro-optical characteristics；Ta=25°C；V_CC=5V；R_L=5kΩ] | typical:4 μs; max:6 μs |
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Key Features
Datasheet
Supplier Information
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