NPD26-512

NPD26-512

Supplier
Nbfamily
Part Number
NPD26-512
Category
Photodiodes
Origin
China

NPD26-512 Photodiode Array with Phased-Array Vernier(Nonius) Code. Layouts for Incremental/Absolute,Sine-Cosine,ABZUVW/Hybrid Encoders;Coating/QFN/Precision Molded/COB/Bare Chip;PD Array/PTr Array/+AMP Signals

Specification Snapshot
Dark Current I_D [Pre-Specification;Electro-optical characteristics;Ta=25°C;V_R=5V]
typical:1 nA
Peak Photosensitivity Wavelength λ_p [Pre-Specification;Electro-optical characteristics;Ta=25°C]
typical:850 nm
Code-Disk Outer Diameter [Parameter image_03 independent-model selection table; NPD26-512]
Ø26
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Overview

NPD26-512 Photodiode Array with Phased-Array Vernier(Nonius) Code. Layouts for Incremental/Absolute,Sine-Cosine,ABZUVW/Hybrid Encoders;Coating/QFN/Precision Molded/COB/Bare Chip;PD Array/PTr Array/+AMP Signals

Specifications

ParameterValue
Photocurrent (N/M/S) I_L1 [Pre-Specification;Electro-optical Characteristics;Ta=25°C;E_v=1000Lux;V_CC=5V;CIE Standard Illuminant A,2856K(Chinese Source Says Halogen Lamp/English Says Tungsten Lamp,Both Retained)]typical:1.8 μA
Photocurrent (MTA/MTB) I_L2 [Pre-Specification;Electro-optical Characteristics;Ta=25°C;E_v=1000Lux;V_CC=5V;CIE Standard Illuminant A,2856K(Chinese Source Says Halogen Lamp/English Says Tungsten Lamp,Both Retained)]typical:0.13 μA
Photocurrent (Ref1/Ref2) I_L3 [Pre-Specification;Electro-optical Characteristics;Ta=25°C;E_v=1000Lux;V_CC=5V;CIE Standard Illuminant A,2856K(Chinese Source Says Halogen Lamp/English Says Tungsten Lamp,Both Retained)]typical:0.06 μA
Dark Current I_D [Pre-Specification;Electro-optical characteristics;Ta=25°C;V_R=5V]typical:1 nA
Spectral Responsivity λ [Pre-Specification;Electro-optical characteristics;Ta=25°C]min:400 nm; max:1000 nm
Peak Photosensitivity Wavelength λ_p [Pre-Specification;Electro-optical characteristics;Ta=25°C]typical:850 nm
Description [Parameter image_03 independent-model selection table; NPD26-512]Pure PD Array, Vernier Code, 512 Lines (2^9)
Code-Disk Outer Diameter [Parameter image_03 independent-model selection table; NPD26-512]Ø26
Code-Disk Optical Radius R0 [Parameter image_03 independent-model selection table; NPD26-512]10.905 mm

Applications

Absolute Position Encoder

Key Features

Vernier Absolute Code;Low-Cost PD Current Output;Reliable QFN;Disk26mm,M Track512 Lines;Polar Thermal Pad Must Short to VCC QFN Pure-PD/ASIC Options;Pure PD High Value/Easy Subsequent Processing and Optimization;ASIC Integrates Amplifier,Comparator,etc.

Datasheet

Product Datasheet
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Supplier Information

Nb
Nbfamily
View Supplier →
Shanghai Enbi Technology Co., Ltd., founded in 2016, focuses on optoelectronic technology R&D and production. Based on optoelectronic semiconductor discrete devices, it integrates optics, MEMS, electronics, microelectronics, semiconductor optoelectronic IC technologies, covering components, optoelectronic ICs, sensor modules, with full capability from chip design to module mass production, holding independent IP and unique testing systems. The company has an excellent management team and skilled staff, rich industry experience, strong R&D, efficient mass production and strict quality control, providing high-performance, reliable, cost-effective products; for special applications, we offer optimal optoelectronic solutions and custom products. Since its establishment, the company insists on independent innovation, quality first, continuously launching innovative products widely used in industrial equipment, automotive electronics, laser ranging, healthcare, instrumentation, security monitoring, smart home, etc., with performance replacing high-end foreign brands. Enbi Technology actively deploys in IoT, intelligent society, AI, driving industry upgrades, aiming to become a high-end optoelectronic brand.

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