NSPD-RD10 Chip
NSPD-RD10 Servo-Motor Encoder PD Array:A/-A,B/-B,Z/-Z,U,V,W,Vref.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Chip thickness [Independent Name/Value Table on Page 1] | 300 μm |
| Passivation [Independent Name/Value Table on Page 1] | Silicon Nitride |
| Top metal [Independent Name/Value Table on Page 1] | Aluminium |
| Bottom metal [Independent Name/Value Table on Page 1] | Gold |
| Bonding pad (Bottom) [Independent Name/Value Table on Page 1; Bottom] | Cathode |
| Forward Voltage V_F [Electro-Optical Characteristics; Ta=25°C; Photodiode of Each Cell; I_F=20mA] | min:0.4 V |
| Reverse Voltage V_R [Electro-Optical Characteristics; Ta=25°C; Photodiode of Each Cell; I_R=100μA] | min:30 V |
| Open Circuit Voltage V_OC [Electro-optical Characteristics; Ta=25°C; Photodiode in Each Cell; E_v=1000Lux; CIE Standard A Light Source, 2856K Tungsten Lamp] | typical:0.4 V |
| Light Current I_L [Electro-optical Characteristics;Ta=25°C;Photodiode in Each Cell;PD1,2,9,10;V_R=5V;E_v=1000Lux;CIE Standard Illuminant A,2856K Tungsten Lamp] | typical:1 μA |
| Light Current I_L [Electro-optical Characteristics;Ta=25°C;Photodiode in Each Cell;PD3~8;V_R=5V;E_v=1000Lux;CIE Standard Illuminant A,2856K Tungsten Lamp] | typical:4 μA |
| Reverse Dark Current I_D [Electro-optical Characteristics; Ta=25°C; Photodiode in Each Cell; V_R=10V; E_v=0] | max:20 nA |
| Total Capacitance Ct [Electro-optical Characteristics; Ta=25°C; Photodiode in Each Cell; V=0V; f=1kHz; E_v=0] | typical:20 pF |
| Peak Wave Length λ_P [Electro-Optical Characteristics; Ta=25°C; Photodiode of Each Cell] | typical:850 nm |
| Spectral Sensitivity λ [Electro-Optical Characteristics; Ta=25°C; Photodiode of Each Cell] | min:450 nm; max:1050 nm |
| Junction Temperature T_J [Electro-Optical Characteristics; Ta=25°C; Photodiode of Each Cell] | max:150 °C |
Applications
Key Features
Datasheet
Supplier Information
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