NPD2211 Dual-Area PD
NPD2211 is a high-speed, highly sensitive silicon photodiode packaged in clear resin. The supplied Chinese active-area entry (mm) is 2 - 0.95 × 1.10, while the accompanying English entry is 2 - 0.95 × 2.50. The dual PD comprises two highly sensitive photodiodes, with various active areas and package types available. Its unique arrangement and good photoelectric characteristics support background suppression, ranging, alignment and displacement measurement. A one-dimensional PSD detects the coordinates of a light spot's centroid. High resolution, fast response and simple signal processing suit rapid, precise noncontact and alignment measurements of displacement, distance, angle and other quantities convertible to spot position or movement.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Overall Dimensions [Dual PD, Multi-Zone PD] | 4.0 mm × 3.0 mm × 1.1 mm |
| Working-Area Dimensions [Dual PD, Multi-Zone PD; Original 2- Compound Expression Retained, Not Calculated or Treated as a Range] | 2-0.95×1.10 |
| Power Consumption P_D [Maximum Ratings; Reference; Ta=25°C; Photodetector Characteristics of Each Cell] | 150 mW |
| Reverse Voltage V_R [Maximum Ratings; Reference; Ta=25°C; Photodetector Characteristics of Each Cell] | 30 V |
| Operating Temperature Topr. [Maximum Ratings; Reference; Ta=25°C; Photodetector Characteristics of Each Cell] | -25~+85 °C |
| Storage Temperature Tstg. [Maximum Ratings; Reference; Ta=25°C; Photodetector Characteristics of Each Cell] | -40~+100 °C |
| Soldering Temperature Tsol. [Maximum Ratings; Reference; Ta=25°C; Photodetector Characteristics of Each Cell; 2mm from Package Edge, No More Than 5 Seconds] | 260 °C |
| Open-Circuit Voltage V_OC [Electro-optical Characteristics;Reference;Ta=25°C;Characteristics of Each Photosensitive Cell;E=1000Lux;CIE Standard Illuminant A,Chinese2856K Halogen Lamp/English2856K Tungsten Lamp] | typical:0.4 V |
| Photocurrent I_L [Electro-optical Characteristics;Reference;Ta=25°C;Characteristics of Each Photosensitive Cell;V_R=5V;E=1000Lux] | typical:10 μA |
| Dark Current I_D [Electro-Optical Characteristics; Reference; Ta=25°C; Photodetector Characteristics of Each Cell; V_R=10V; E=0mW/cm²] | max:100 nA |
| Reverse Breakdown Voltage V_R [Electro-Optical Characteristics; Reference; Ta=25°C; Photodetector Characteristics of Each Cell; I_R=10μA; E=0mW/cm²] | min:30 V |
| Total Capacitance Ct [Electro-optical Characteristics; Reference; Ta=25°C; Characteristics of the Photosensitive Device in Each Cell; V_R=5V; f=1MHz; E=0mW/cm²] | typical:40 pF |
| Spectral Response λ [Electro-Optical Characteristics; Reference; Ta=25°C; Photodetector Characteristics of Each Cell] | min:400 nm; max:1100 nm |
| Peak Photosensitivity Wavelength λ_P [Electro-Optical Characteristics; Reference; Ta=25°C; Photodetector Characteristics of Each Cell] | typical:700 nm |
Applications
Key Features
Datasheet
Supplier Information
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