NDT4115
The NDT4115 is a silicon avalanche photodiode in a small package, combining high gain and fast response with high operating frequency and high multiplication gain. High-Gain APD for Weak Light,Handheld/Scope Ranging,LiDAR,Medical Analysis;Precise Cost-Effective Molded Package without Filter;NBTech Co-Packable/Arrayable Chips,Developing Array/Quadrant/Special Shapes.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Package Dimensions [Molded-Package APD Product; Parameter Image 01 Independent Selection Table] | 3.0 mm × 1.5 mm × 1.1 mm |
| Chip Dimensions [Molded-Package APD Product; Parameter Image 01 Independent Selection Table] | 1.00 mm × 1.00 mm |
| Photosensitive Region [Molded-Package APD Product; Parameter Image 01 Independent Selection Table] | Φ500 |
| Reverse Breakdown Voltage V_BR [Molded-Package APD Product; Parameter Image 01 Independent Selection Table] | 120~160 V |
| Photosensitive Wavelength [Molded-Package APD Product; Parameter Image 01 Independent Selection Table; Parenthesized Wavelength Has No Original Explanation and Is Not Assumed to Be a Peak] | 400~1050nm（860nm） |
| Forward Current I_F [MAXIMUM RATINGS；Ta=25°C] | 1 mA |
| Peak Reverse Current I_R [MAXIMUM RATINGS；Ta=25°C] | 0.25 mA |
| Operating Temperature Topr. [MAXIMUM RATINGS；Ta=25°C] | -20~+60 °C |
| Storage Temperature Tstg. [MAXIMUM RATINGS；Ta=25°C] | -40~+80 °C |
| Soldering Temperature Tstg. [MAXIMUM RATINGS; Ta=25°C; Source Symbol Is Tstg., the Same as Storage Temperature; Retained as in Source] | 260 °C |
| Active Area Diameter [Independent Features on Page 1] | 500 μm |
| Spectral Response Range λ [Electro-optical characteristics；Ta=25°C；M=1] | min:400 nm; max:1050 nm |
| Responsivity Re [Electro-optical characteristics; Ta=25°C; λ=905 (no unit specified in the source); M=1] | typical:0.55 A/W |
| Reverse Breakdown Voltage V_BR [Electro-optical characteristics；Ta=25°C；I_R=100μA] | min:120 V; max:160 V |
| Breakdown-Voltage Temperature Coefficient δ [Electro-optical characteristics；Ta=25°C] | typical:1.4 V/°C |
| Dark Current I_D [Electro-optical characteristics；Ta=25°C；M=100] | typical:0.6 nA; max:2 nA |
| Response Time Ts [Electro-optical characteristics；Ta=25°C；M=100；R_L=50Ω；λ=800nm] | typical:0.35 ns |
| Capacitance C [Electro-optical characteristics；Ta=25°C；M=100；f=1MHz] | typical:2.2 pF |
| Cutoff Frequency f_C [Electro-optical characteristics；Ta=25°C；M=100；R_L=50Ω；λ=800nm；-3dB] | typical:1 GHz |
| Amplification Factor M [Electro-optical characteristics；Ta=25°C] | Typ:100 |
| Peak Response Wavelength λ_P [Electro-optical characteristics；Ta=25°C] | typical:860 nm |
| Quantity per Package [Independent Note on PDF Page 4] | 2000pcs/Bag; 10000pcs/Box |
| Packaging Method [Independent Note on PDF Page 4] | Vacuum, Moisture-Proof, Antistatic Bag; Desiccant in Each Bag |
| Storage Temperature [Before Opening the Bag; Independent CAUTION on Page 5] | 5~30 °C |
| Storage Humidity [Before Opening the Bag; Independent CAUTION on Page 5, Chinese/English Boundaries Retained] | Chinese: RH<60%; English: RH60%Max |
| Storage Time [Before Opening the Bag; Independent CAUTION on Page 5] | Chinese: t<12 Months; English: Time: 12 Months |
| Storage Humidity [After Opening the Bag; For Infrared / Vapor-Phase Reflow Soldering or Similar Processes] | <20 %RH |
| Storage Temperature [Complete Soldering within 168 Hours after Opening the Bag; Independent CAUTION on Page 5] | Chinese: T<30°C; English: Temperature: 30°C Max |
| Storage Humidity [Complete Soldering within 168 Hours after Opening the Bag; Independent CAUTION on Page 5] | Chinese: RH<60%; English: RH60%Max |
| Baking Conditions [If Storage Conditions Were Not Met, Before Resoldering; Baking Also Required When the Humidity Indicator Card Shows >30% after Opening the Bag] | t=12 Hours; T=60°C±3°C; RH<5% |
| Avalanche Voltage [Independent Features on Page 1] | 120~160 V |
Applications
Key Features
Datasheet
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